Eutectic Zn-Al Die Attachment for Higher Tj SiC Power Applications: Fabrication Method and Die Shear Strength Reliability
This paper comprehensively describes the fabrication method and shear strength reliability of a eutectic Zn-Al (m.p. = 382°C) attachment system, built by soldering SiC dice (2 × 2 mm2) onto Cu foil active-metal-brazed with a SiN ceramic plate. Four essential soldering conditions are presented and di...
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| Veröffentlicht in: | Journal of microelectronics and electronic packaging 2013-04, Vol.10 (2), p.59-66 |
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| container_title | Journal of microelectronics and electronic packaging |
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| creator | TANIMOTO, Satoshi MATSUI, Kohei ZUSHI, Yusuke SATO, Shinji MURAKAMI, Yoshinori TAKAMORI, Masato ISEKI, Takashi |
| description | This paper comprehensively describes the fabrication method and shear strength reliability of a eutectic Zn-Al (m.p. = 382°C) attachment system, built by soldering SiC dice (2 × 2 mm2) onto Cu foil active-metal-brazed with a SiN ceramic plate. Four essential soldering conditions are presented and discussed for the formation of a strong and reproducible attachment. Die shear strength reliability data at Tj = 250°C are reported here for the first time. Storage tests at 250°C revealed that, after an initial slight decline, the die shear strength stayed virtually constant at a sufficient level (∼110 MPa) for at least 3,000 h. Thermal cycle test results indicated that the attachments can withstand thermal cycle stress for 3,000 cycles between −40°C and 250°C. The average die shear strength after 3,000 cycles was 18.5 MPa, a value that is three times higher than the IEC standard of 6.2 MPa specified in Document 60749-19. |
| doi_str_mv | 10.4071/imaps.373 |
| format | Article |
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Four essential soldering conditions are presented and discussed for the formation of a strong and reproducible attachment. Die shear strength reliability data at Tj = 250°C are reported here for the first time. Storage tests at 250°C revealed that, after an initial slight decline, the die shear strength stayed virtually constant at a sufficient level (∼110 MPa) for at least 3,000 h. Thermal cycle test results indicated that the attachments can withstand thermal cycle stress for 3,000 cycles between −40°C and 250°C. The average die shear strength after 3,000 cycles was 18.5 MPa, a value that is three times higher than the IEC standard of 6.2 MPa specified in Document 60749-19.</description><identifier>ISSN: 1551-4897</identifier><identifier>DOI: 10.4071/imaps.373</identifier><language>eng</language><publisher>Washington, DC: International Microelectronics and Packaging Society</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electrical engineering. Electrical power engineering ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Integrated circuits ; Power electronics, power supplies ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Four essential soldering conditions are presented and discussed for the formation of a strong and reproducible attachment. Die shear strength reliability data at Tj = 250°C are reported here for the first time. Storage tests at 250°C revealed that, after an initial slight decline, the die shear strength stayed virtually constant at a sufficient level (∼110 MPa) for at least 3,000 h. Thermal cycle test results indicated that the attachments can withstand thermal cycle stress for 3,000 cycles between −40°C and 250°C. The average die shear strength after 3,000 cycles was 18.5 MPa, a value that is three times higher than the IEC standard of 6.2 MPa specified in Document 60749-19.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Power electronics, power supplies</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Technologies. Operation analysis. Testing</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Power electronics, power supplies</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>TANIMOTO, Satoshi</creatorcontrib><creatorcontrib>MATSUI, Kohei</creatorcontrib><creatorcontrib>ZUSHI, Yusuke</creatorcontrib><creatorcontrib>SATO, Shinji</creatorcontrib><creatorcontrib>MURAKAMI, Yoshinori</creatorcontrib><creatorcontrib>TAKAMORI, Masato</creatorcontrib><creatorcontrib>ISEKI, Takashi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of microelectronics and electronic packaging</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>TANIMOTO, Satoshi</au><au>MATSUI, Kohei</au><au>ZUSHI, Yusuke</au><au>SATO, Shinji</au><au>MURAKAMI, Yoshinori</au><au>TAKAMORI, Masato</au><au>ISEKI, Takashi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Eutectic Zn-Al Die Attachment for Higher Tj SiC Power Applications: Fabrication Method and Die Shear Strength Reliability</atitle><jtitle>Journal of microelectronics and electronic packaging</jtitle><date>2013-04-01</date><risdate>2013</risdate><volume>10</volume><issue>2</issue><spage>59</spage><epage>66</epage><pages>59-66</pages><issn>1551-4897</issn><abstract>This paper comprehensively describes the fabrication method and shear strength reliability of a eutectic Zn-Al (m.p. = 382°C) attachment system, built by soldering SiC dice (2 × 2 mm2) onto Cu foil active-metal-brazed with a SiN ceramic plate. Four essential soldering conditions are presented and discussed for the formation of a strong and reproducible attachment. Die shear strength reliability data at Tj = 250°C are reported here for the first time. Storage tests at 250°C revealed that, after an initial slight decline, the die shear strength stayed virtually constant at a sufficient level (∼110 MPa) for at least 3,000 h. Thermal cycle test results indicated that the attachments can withstand thermal cycle stress for 3,000 cycles between −40°C and 250°C. The average die shear strength after 3,000 cycles was 18.5 MPa, a value that is three times higher than the IEC standard of 6.2 MPa specified in Document 60749-19.</abstract><cop>Washington, DC</cop><pub>International Microelectronics and Packaging Society</pub><doi>10.4071/imaps.373</doi><tpages>8</tpages></addata></record> |
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| source | Alma/SFX Local Collection |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuits Power electronics, power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Eutectic Zn-Al Die Attachment for Higher Tj SiC Power Applications: Fabrication Method and Die Shear Strength Reliability |
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