Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer

The excellent material properties of the wide band gap semiconductor SiC are accompanied by challenges in device processing. Of particular importance is the incomplete activation of implanted Al acceptors after high-temperature annealing. In this work, we present a novel approach in applying the dif...

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Veröffentlicht in:	Materials science forum 2022-05, Vol.1062, p.38-43
Hauptverfasser:	Rommel, Mathias, Pobegen, Gregor, Schustereder, Werner, Mletschnig, Kristijan Luka, Pichler, Peter
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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