Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor

In this work, the voltage and temperature behavior of gate leakage current transport in SiC/SiO2 metal oxide semiconductor (MOS) capacitor was investigated. The wide range of gate voltage from-50 to 50V and temperature from 300 to 400 K, respectively uses to study the gate current conduction mechani...

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Veröffentlicht in:	Materials science forum 2023-05, Vol.1090, p.165-169
Hauptverfasser:	Singh, Navab, Chung, Surasit, Voo, Qin Gui Roth, Han, K.M., Chand, Umesh, Bera, Lakshmi Kanta, Chua, Calvin Hung Ming
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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