Effect of sulfur incorporation on solution-processed ZTO thin-film transistors
In this research, we investigated the electrical properties of solution-processed sulfur (S)-incorporated zinc-tin-oxide (S-ZTO) thin-film transistors (TFTs). The best device characteristics, which include a threshold voltage of −0.74 V, a sub-threshold swing of 0.67 V/dec, an on/off current ratio o...
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| Veröffentlicht in: | Journal of the Korean Physical Society 2015-04, Vol.66 (7), p.1144-1148 |
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| creator | Oh, Sang-A Yu, Kyeong Min Jeong, So-Hyun Bae, Byung Seong Yun, Eui-Jung |
| description | In this research, we investigated the electrical properties of solution-processed sulfur (S)-incorporated zinc-tin-oxide (S-ZTO) thin-film transistors (TFTs). The best device characteristics, which include a threshold voltage of −0.74 V, a sub-threshold swing of 0.67 V/dec, an on/off current ratio of 8.31 × 10
5
, and a mobility of 0.70 cm
2
/Vs, were observed for 0.06-M S-ZTO TFTs. The device properties of the 0.06-M S-ZTO TFTs were similar to those of ZTO TFTs whereas the illumination stress stabilities and the hysteresis characteristics of the transfer curve for 0.06-M S-ZTO TFTs were better than those for ZTO TFTs. The X-ray diffraction analysis for the S-ZTO thin films also showed that tin (Sn) atoms bonded chemically with S atoms, suggesting that S atoms occupied oxygen sites, which, in turn, the reduced the number of oxygen vacancies. Therefore, the improved stabilities observed in S-ZTO TFTs are attributed to the reduction in the number of oxygen vacancies due to replacement of O by S. |
| doi_str_mv | 10.3938/jkps.66.1144 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_sprin</sourceid><recordid>TN_cdi_crossref_primary_10_3938_jkps_66_1144</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_3938_jkps_66_1144</sourcerecordid><originalsourceid>FETCH-LOGICAL-c339t-6530ce241d8749e16db47e815f80cd2f89e1960faac5aba230acd01792c091c33</originalsourceid><addsrcrecordid>eNptkMFKxDAQhoMoWFdvPkAewNSkSdPkKMvqCot7WS9eQjZNtLXblEx78O1tWY_CwAw_Hz_Dh9A9oznXXD223wPkUuaMCXGBMqYrSVRZiEuUUV4JIpQS1-gGoKVUcF7JDL1tQvBuxDFgmLowJdz0LqYhJjs2scfzQOym5SZDis4D-Bp_HPZ4_Gp6EpruhMdke2hgjAlu0VWwHfi7v71C78-bw3pLdvuX1_XTjjjO9UhkyanzhWC1qoT2TNZHUXnFyqCoq4ug5kxLGqx1pT3aglPrasoqXTiq2dyxQg_nXpciQPLBDKk52fRjGDWLC7O4MFKaxcWMkzMOM9Z_-mTaOKV-_vB__heQeWNr</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of sulfur incorporation on solution-processed ZTO thin-film transistors</title><source>SpringerLink Journals - AutoHoldings</source><creator>Oh, Sang-A ; Yu, Kyeong Min ; Jeong, So-Hyun ; Bae, Byung Seong ; Yun, Eui-Jung</creator><creatorcontrib>Oh, Sang-A ; Yu, Kyeong Min ; Jeong, So-Hyun ; Bae, Byung Seong ; Yun, Eui-Jung</creatorcontrib><description>In this research, we investigated the electrical properties of solution-processed sulfur (S)-incorporated zinc-tin-oxide (S-ZTO) thin-film transistors (TFTs). The best device characteristics, which include a threshold voltage of −0.74 V, a sub-threshold swing of 0.67 V/dec, an on/off current ratio of 8.31 × 10
5
, and a mobility of 0.70 cm
2
/Vs, were observed for 0.06-M S-ZTO TFTs. The device properties of the 0.06-M S-ZTO TFTs were similar to those of ZTO TFTs whereas the illumination stress stabilities and the hysteresis characteristics of the transfer curve for 0.06-M S-ZTO TFTs were better than those for ZTO TFTs. The X-ray diffraction analysis for the S-ZTO thin films also showed that tin (Sn) atoms bonded chemically with S atoms, suggesting that S atoms occupied oxygen sites, which, in turn, the reduced the number of oxygen vacancies. Therefore, the improved stabilities observed in S-ZTO TFTs are attributed to the reduction in the number of oxygen vacancies due to replacement of O by S.</description><identifier>ISSN: 0374-4884</identifier><identifier>EISSN: 1976-8524</identifier><identifier>DOI: 10.3938/jkps.66.1144</identifier><language>eng</language><publisher>Seoul: The Korean Physical Society</publisher><subject>Mathematical and Computational Physics ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Theoretical</subject><ispartof>Journal of the Korean Physical Society, 2015-04, Vol.66 (7), p.1144-1148</ispartof><rights>The Korean Physical Society 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c339t-6530ce241d8749e16db47e815f80cd2f89e1960faac5aba230acd01792c091c33</citedby><cites>FETCH-LOGICAL-c339t-6530ce241d8749e16db47e815f80cd2f89e1960faac5aba230acd01792c091c33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3938/jkps.66.1144$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3938/jkps.66.1144$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Oh, Sang-A</creatorcontrib><creatorcontrib>Yu, Kyeong Min</creatorcontrib><creatorcontrib>Jeong, So-Hyun</creatorcontrib><creatorcontrib>Bae, Byung Seong</creatorcontrib><creatorcontrib>Yun, Eui-Jung</creatorcontrib><title>Effect of sulfur incorporation on solution-processed ZTO thin-film transistors</title><title>Journal of the Korean Physical Society</title><addtitle>Journal of the Korean Physical Society</addtitle><description>In this research, we investigated the electrical properties of solution-processed sulfur (S)-incorporated zinc-tin-oxide (S-ZTO) thin-film transistors (TFTs). The best device characteristics, which include a threshold voltage of −0.74 V, a sub-threshold swing of 0.67 V/dec, an on/off current ratio of 8.31 × 10
5
, and a mobility of 0.70 cm
2
/Vs, were observed for 0.06-M S-ZTO TFTs. The device properties of the 0.06-M S-ZTO TFTs were similar to those of ZTO TFTs whereas the illumination stress stabilities and the hysteresis characteristics of the transfer curve for 0.06-M S-ZTO TFTs were better than those for ZTO TFTs. The X-ray diffraction analysis for the S-ZTO thin films also showed that tin (Sn) atoms bonded chemically with S atoms, suggesting that S atoms occupied oxygen sites, which, in turn, the reduced the number of oxygen vacancies. Therefore, the improved stabilities observed in S-ZTO TFTs are attributed to the reduction in the number of oxygen vacancies due to replacement of O by S.</description><subject>Mathematical and Computational Physics</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Theoretical</subject><issn>0374-4884</issn><issn>1976-8524</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNptkMFKxDAQhoMoWFdvPkAewNSkSdPkKMvqCot7WS9eQjZNtLXblEx78O1tWY_CwAw_Hz_Dh9A9oznXXD223wPkUuaMCXGBMqYrSVRZiEuUUV4JIpQS1-gGoKVUcF7JDL1tQvBuxDFgmLowJdz0LqYhJjs2scfzQOym5SZDis4D-Bp_HPZ4_Gp6EpruhMdke2hgjAlu0VWwHfi7v71C78-bw3pLdvuX1_XTjjjO9UhkyanzhWC1qoT2TNZHUXnFyqCoq4ug5kxLGqx1pT3aglPrasoqXTiq2dyxQg_nXpciQPLBDKk52fRjGDWLC7O4MFKaxcWMkzMOM9Z_-mTaOKV-_vB__heQeWNr</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Oh, Sang-A</creator><creator>Yu, Kyeong Min</creator><creator>Jeong, So-Hyun</creator><creator>Bae, Byung Seong</creator><creator>Yun, Eui-Jung</creator><general>The Korean Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150401</creationdate><title>Effect of sulfur incorporation on solution-processed ZTO thin-film transistors</title><author>Oh, Sang-A ; Yu, Kyeong Min ; Jeong, So-Hyun ; Bae, Byung Seong ; Yun, Eui-Jung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-6530ce241d8749e16db47e815f80cd2f89e1960faac5aba230acd01792c091c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Mathematical and Computational Physics</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Theoretical</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Oh, Sang-A</creatorcontrib><creatorcontrib>Yu, Kyeong Min</creatorcontrib><creatorcontrib>Jeong, So-Hyun</creatorcontrib><creatorcontrib>Bae, Byung Seong</creatorcontrib><creatorcontrib>Yun, Eui-Jung</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Korean Physical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oh, Sang-A</au><au>Yu, Kyeong Min</au><au>Jeong, So-Hyun</au><au>Bae, Byung Seong</au><au>Yun, Eui-Jung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of sulfur incorporation on solution-processed ZTO thin-film transistors</atitle><jtitle>Journal of the Korean Physical Society</jtitle><stitle>Journal of the Korean Physical Society</stitle><date>2015-04-01</date><risdate>2015</risdate><volume>66</volume><issue>7</issue><spage>1144</spage><epage>1148</epage><pages>1144-1148</pages><issn>0374-4884</issn><eissn>1976-8524</eissn><abstract>In this research, we investigated the electrical properties of solution-processed sulfur (S)-incorporated zinc-tin-oxide (S-ZTO) thin-film transistors (TFTs). The best device characteristics, which include a threshold voltage of −0.74 V, a sub-threshold swing of 0.67 V/dec, an on/off current ratio of 8.31 × 10
5
, and a mobility of 0.70 cm
2
/Vs, were observed for 0.06-M S-ZTO TFTs. The device properties of the 0.06-M S-ZTO TFTs were similar to those of ZTO TFTs whereas the illumination stress stabilities and the hysteresis characteristics of the transfer curve for 0.06-M S-ZTO TFTs were better than those for ZTO TFTs. The X-ray diffraction analysis for the S-ZTO thin films also showed that tin (Sn) atoms bonded chemically with S atoms, suggesting that S atoms occupied oxygen sites, which, in turn, the reduced the number of oxygen vacancies. Therefore, the improved stabilities observed in S-ZTO TFTs are attributed to the reduction in the number of oxygen vacancies due to replacement of O by S.</abstract><cop>Seoul</cop><pub>The Korean Physical Society</pub><doi>10.3938/jkps.66.1144</doi><tpages>5</tpages></addata></record> |
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| subjects | Mathematical and Computational Physics Particle and Nuclear Physics Physics Physics and Astronomy Theoretical |
| title | Effect of sulfur incorporation on solution-processed ZTO thin-film transistors |
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