The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE
In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In 0.53 Ga 0.47 As/Al 0.48 In 0.52 As superlattices lattice-matched to InP were grown by low pressure metal organic vap...
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| Veröffentlicht in: | Optica applicata 2020, Vol.50 (2) |
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| container_title | Optica applicata |
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| creator | Łozińska, Adriana Badura, Mikołaj Bielak, Katarzyna Ściana, Beata Tłaczała, Marek |
| description | In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In
0.53
Ga
0.47
As/Al
0.48
In
0.52
As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy. |
| doi_str_mv | 10.37190/oa200208 |
| format | Article |
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0.53
Ga
0.47
As/Al
0.48
In
0.52
As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.</description><identifier>ISSN: 0078-5466</identifier><identifier>EISSN: 1899-7015</identifier><identifier>DOI: 10.37190/oa200208</identifier><language>eng</language><ispartof>Optica applicata, 2020, Vol.50 (2)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c264t-a4e497d13b98466b11ba5c4cb3f5999e55c703bf538216c5749dff35329d5b563</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4009,27902,27903,27904</link.rule.ids></links><search><creatorcontrib>Łozińska, Adriana</creatorcontrib><creatorcontrib>Badura, Mikołaj</creatorcontrib><creatorcontrib>Bielak, Katarzyna</creatorcontrib><creatorcontrib>Ściana, Beata</creatorcontrib><creatorcontrib>Tłaczała, Marek</creatorcontrib><title>The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE</title><title>Optica applicata</title><description>In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In
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0.48
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As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.</description><issn>0078-5466</issn><issn>1899-7015</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo1kEFPwyAAhYnRxDk9-A-4eqiDUtpybJa5LanZDtNrAxRslUEFmmVn_7hz6uklL3lf8j4A7jF6JAVmaOZ4ilCKygswwSVjSYEwvQQThIoyoVmeX4ObEN4RojQt8wn42nUK9labUVmpoNPwc-Q2jnt4UMZAblsouPe98jB2vfywKgQVoLNw6Fx0Ztz3p0qex2FQMnr-A1nbJa_CrDJrWwUYxkF5w2Ps5Wn75t3BQnGE9TZ53rxuF7fgSnMT1N1fTsHL02I3XyX1ZrmeV3Ui0zyLCc9UxooWE8HK0xGBseBUZlIQTRljilJZICI0JWWKc0mLjLVaE0pS1lJBczIFD79c6V0IXulm8P2e-2ODUXO21_zbI98HaGOV</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Łozińska, Adriana</creator><creator>Badura, Mikołaj</creator><creator>Bielak, Katarzyna</creator><creator>Ściana, Beata</creator><creator>Tłaczała, Marek</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2020</creationdate><title>The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE</title><author>Łozińska, Adriana ; Badura, Mikołaj ; Bielak, Katarzyna ; Ściana, Beata ; Tłaczała, Marek</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c264t-a4e497d13b98466b11ba5c4cb3f5999e55c703bf538216c5749dff35329d5b563</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Łozińska, Adriana</creatorcontrib><creatorcontrib>Badura, Mikołaj</creatorcontrib><creatorcontrib>Bielak, Katarzyna</creatorcontrib><creatorcontrib>Ściana, Beata</creatorcontrib><creatorcontrib>Tłaczała, Marek</creatorcontrib><collection>CrossRef</collection><jtitle>Optica applicata</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Łozińska, Adriana</au><au>Badura, Mikołaj</au><au>Bielak, Katarzyna</au><au>Ściana, Beata</au><au>Tłaczała, Marek</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE</atitle><jtitle>Optica applicata</jtitle><date>2020</date><risdate>2020</risdate><volume>50</volume><issue>2</issue><issn>0078-5466</issn><eissn>1899-7015</eissn><abstract>In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In
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As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.</abstract><doi>10.37190/oa200208</doi><oa>free_for_read</oa></addata></record> |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| title | The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE |
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