Design of FinFET based 128 bit SRAM in 7nm & Various Effects near Threshold Operation for Ultra Low Power Application

With the existing technology and survey it indicates the increasing the number of transistors count and exploring methodologies leads to innovative design in memories. In general SRAM occupies considerable amount of area and less performance due to leakage power that limits the operation under sub t...

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Veröffentlicht in:	International journal of recent technology and engineering 2020-01, Vol.8 (5), p.3361-3366
Hauptverfasser:	Reddy, T. Vasudeva, Rao, K. Madhava, Reddy, P. Kavitha
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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