Surface patterning of wide-gap semiconducting β-Ga 2 O 3 thin films by area selective crystallization via room-temperature excimer laser annealing and low toxic wet-etching processes

In the present study, we have developed a fully room-temperature and low toxic surface-patterning method for β-Ga 2 O 3 , where consists of the area selective laser-induced crystallization of amorphous Ga 2 O 3 thin films and acid-solution etching processes. Highly (−201)-oriented crystalline β-Ga 2...

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Veröffentlicht in:	Applied physics express 2024-12
Hauptverfasser:	Shiojiri, Daishi, Kai, Ryoya, Kaneko, Satoru, Matsuda, Aakifumi, Yoshimoto, Mamoru
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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