Evaluation of stress in (111) homoepitaxial CVD diamond films by Raman spectrum and nitrogen-vacancy centers

The reduction of inhomogeneous stress in diamonds is crucially important for extracting excellent performance of semiconducting diamonds. In this study, to investigate elastic deformation in nitrogen doped (111) diamond films caused by stress, we evaluated the stress in these films using confocal Ra...

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Veröffentlicht in:	Applied physics express 2024-11, Vol.17 (11), p.115502
Hauptverfasser:	Tsuji, T., Shinei, C., Iwasaki, T., Hatano, M., Teraji, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	chemical vapor deposition diamond misorientation angle NV center stress
Online-Zugang:	Volltext
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