Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability
We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on...
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| Veröffentlicht in: | Applied physics express 2023-11, Vol.16 (11), p.111002 |
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| creator | Park, Sunghyun Park, Boyeon Kim, Woojong Yoo, Kunsang Kim, Yong-Hoon |
| description | We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on electrical properties such as field-effect mobility and bias stability. We observed that with a 90% coverage ratio of IZTO FCL, the mobility increased from 15.9 cm
2
Vs
−1
to 20.4 cm
2
Vs
−1
, with a suppressed threshold voltage (
V
th
) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a
V
th
shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance. |
| doi_str_mv | 10.35848/1882-0786/ad0654 |
| format | Article |
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2
Vs
−1
to 20.4 cm
2
Vs
−1
, with a suppressed threshold voltage (
V
th
) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a
V
th
shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.35848/1882-0786/ad0654</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>band bending ; geometrical design ; heterojunction channel ; oxide semiconductors ; thin-film transistors</subject><ispartof>Applied physics express, 2023-11, Vol.16 (11), p.111002</ispartof><rights>2023 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c269t-3ed70bd1bab1d4e16bef0cc0fa01c0292968a3cf1ffd16ba24108cd75bb2229d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1882-0786/ad0654/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27922,27923,53844,53891</link.rule.ids></links><search><creatorcontrib>Park, Sunghyun</creatorcontrib><creatorcontrib>Park, Boyeon</creatorcontrib><creatorcontrib>Kim, Woojong</creatorcontrib><creatorcontrib>Yoo, Kunsang</creatorcontrib><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><title>Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on electrical properties such as field-effect mobility and bias stability. We observed that with a 90% coverage ratio of IZTO FCL, the mobility increased from 15.9 cm
2
Vs
−1
to 20.4 cm
2
Vs
−1
, with a suppressed threshold voltage (
V
th
) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a
V
th
shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance.</description><subject>band bending</subject><subject>geometrical design</subject><subject>heterojunction channel</subject><subject>oxide semiconductors</subject><subject>thin-film transistors</subject><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1UE1LxDAQDaLguvoDvOXqoW6SdvtxlEVXYcGLnkOaTGyWNilJCru_wT9t1oonhYEZ3nvzZngI3VJyn6_rol7RumYZqepyJRQp18UZWvxC579zVV-iqxD2hJRFTssF-tyCGyB6I0XfH7GCYD4sKCwG58fOTQG7g1GAAwxGOqsmGZ3HHUTwbj9ZGY2zOHbGZtr0A45e2GBC0gSskxBsJ6xMftCDnK_gEXyihhOOhVU4RNGa3sTjNbrQog9w89OX6P3p8W3znO1ety-bh10mWdnELAdVkVbRVrRUFUDLFjSRkmhBqCSsYU1Zi1xqqrVKpGAFJbVU1bptGWONypeIzr7SuxA8aD56Mwh_5JTw7zT5KS5-io7Paaadu3nHuJHv3eRt-pCLEQ6clpzSVJQQxkelkzb7Q_u_9xcisIoR</recordid><startdate>20231101</startdate><enddate>20231101</enddate><creator>Park, Sunghyun</creator><creator>Park, Boyeon</creator><creator>Kim, Woojong</creator><creator>Yoo, Kunsang</creator><creator>Kim, Yong-Hoon</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20231101</creationdate><title>Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability</title><author>Park, Sunghyun ; Park, Boyeon ; Kim, Woojong ; Yoo, Kunsang ; Kim, Yong-Hoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c269t-3ed70bd1bab1d4e16bef0cc0fa01c0292968a3cf1ffd16ba24108cd75bb2229d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>band bending</topic><topic>geometrical design</topic><topic>heterojunction channel</topic><topic>oxide semiconductors</topic><topic>thin-film transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Sunghyun</creatorcontrib><creatorcontrib>Park, Boyeon</creatorcontrib><creatorcontrib>Kim, Woojong</creatorcontrib><creatorcontrib>Yoo, Kunsang</creatorcontrib><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Sunghyun</au><au>Park, Boyeon</au><au>Kim, Woojong</au><au>Yoo, Kunsang</au><au>Kim, Yong-Hoon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2023-11-01</date><risdate>2023</risdate><volume>16</volume><issue>11</issue><spage>111002</spage><pages>111002-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on electrical properties such as field-effect mobility and bias stability. We observed that with a 90% coverage ratio of IZTO FCL, the mobility increased from 15.9 cm
2
Vs
−1
to 20.4 cm
2
Vs
−1
, with a suppressed threshold voltage (
V
th
) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a
V
th
shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance.</abstract><pub>IOP Publishing</pub><doi>10.35848/1882-0786/ad0654</doi><tpages>6</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | band bending geometrical design heterojunction channel oxide semiconductors thin-film transistors |
| title | Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability |
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