Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques
To investigate how the electrical properties of AlGaN/GaN HEMTs are dominated by the near-surface region, transmission line method and X-ray photoelectron spectroscopy (XPS) measurements were conducted on three samples. There was one sample with poor ohmic properties. The XPS results indicate that t...
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| Veröffentlicht in: | Applied physics express 2023-09, Vol.16 (9), p.91002 |
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| creator | Ochi, Ryota Togashi, Takuya Osawa, Yoshito Horikiri, Fumimasa Fujikura, Hajime Fujikawa, Kazunari Furuya, Takashi Isono, Ryota Akazawa, Masamichi Sato, Taketomo |
| description | To investigate how the electrical properties of AlGaN/GaN HEMTs are dominated by the near-surface region, transmission line method and X-ray photoelectron spectroscopy (XPS) measurements were conducted on three samples. There was one sample with poor ohmic properties. The XPS results indicate that the surface-Fermi-level,
E
FS
, position of the poor-ohmic sample was deeper than the others. When a 5 nm thick surface layer was removed by contactless photo-electrochemical etching,
E
FS
shifted to the same position as the others and the contact resistance improved. These results indicate that the control of the near-surface region of AlGaN can be a dominant factor changing the
E
FS
position, which greatly affects the ohmic properties. |
| doi_str_mv | 10.35848/1882-0786/acf644 |
| format | Article |
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E
FS
, position of the poor-ohmic sample was deeper than the others. When a 5 nm thick surface layer was removed by contactless photo-electrochemical etching,
E
FS
shifted to the same position as the others and the contact resistance improved. These results indicate that the control of the near-surface region of AlGaN can be a dominant factor changing the
E
FS
position, which greatly affects the ohmic properties.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.35848/1882-0786/acf644</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Fermi-level-pinning ; GaN ; HEMT ; PEC ; surface states ; XPS</subject><ispartof>Applied physics express, 2023-09, Vol.16 (9), p.91002</ispartof><rights>2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c311t-f4a269fd5cc21368bf6484cf58bc09d33f6d5acb093c6acafbcc43a4974c2af13</cites><orcidid>0000-0001-6710-3045 ; 0000-0001-6528-5973 ; 0000-0001-5032-6947 ; 0000-0003-0389-2414</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1882-0786/acf644/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,776,780,27903,27904,53824,53871</link.rule.ids></links><search><creatorcontrib>Ochi, Ryota</creatorcontrib><creatorcontrib>Togashi, Takuya</creatorcontrib><creatorcontrib>Osawa, Yoshito</creatorcontrib><creatorcontrib>Horikiri, Fumimasa</creatorcontrib><creatorcontrib>Fujikura, Hajime</creatorcontrib><creatorcontrib>Fujikawa, Kazunari</creatorcontrib><creatorcontrib>Furuya, Takashi</creatorcontrib><creatorcontrib>Isono, Ryota</creatorcontrib><creatorcontrib>Akazawa, Masamichi</creatorcontrib><creatorcontrib>Sato, Taketomo</creatorcontrib><title>Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>To investigate how the electrical properties of AlGaN/GaN HEMTs are dominated by the near-surface region, transmission line method and X-ray photoelectron spectroscopy (XPS) measurements were conducted on three samples. There was one sample with poor ohmic properties. The XPS results indicate that the surface-Fermi-level,
E
FS
, position of the poor-ohmic sample was deeper than the others. When a 5 nm thick surface layer was removed by contactless photo-electrochemical etching,
E
FS
shifted to the same position as the others and the contact resistance improved. These results indicate that the control of the near-surface region of AlGaN can be a dominant factor changing the
E
FS
position, which greatly affects the ohmic properties.</description><subject>Fermi-level-pinning</subject><subject>GaN</subject><subject>HEMT</subject><subject>PEC</subject><subject>surface states</subject><subject>XPS</subject><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNp9UE1LAzEQXURBrf4Abzl6cG2ySdPssRStQv0AK3gL09mkjbTZNcmK_g7_sNtWPImHYb7eG968LDtj9JIPlFB9plSR06GSfUArhdjLjn5H-7_1UB1mxzG-UioFZ_Io-7r17yYmt4Dkak9qS6p67Tx4NMR54g2EPLbBQtcHs9hiPDErgyk4hBVpQt2YkJyJG_JoNYH7fhdkaZIJdUyhxdSGbttG5xdkNr27IC-PTxcEfEUer8bEJFxuNsng0ru31sST7MDCKprTn9zLnq-vZuObfPowuR2PpjlyxlJuBRSytNUAsWBcqnn3thJoB2qOtKw4t7IaAM5pyVECgp0jCg6iHAoswDLey9juLnZCYzBWN8GtIXxqRvXWVb2xTW8s1DtXO06-47i60a91G3yn8F_8-R94aMyHZlKXmpaM0kI3leXfodyKJg</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>Ochi, Ryota</creator><creator>Togashi, Takuya</creator><creator>Osawa, Yoshito</creator><creator>Horikiri, Fumimasa</creator><creator>Fujikura, Hajime</creator><creator>Fujikawa, Kazunari</creator><creator>Furuya, Takashi</creator><creator>Isono, Ryota</creator><creator>Akazawa, Masamichi</creator><creator>Sato, Taketomo</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-6710-3045</orcidid><orcidid>https://orcid.org/0000-0001-6528-5973</orcidid><orcidid>https://orcid.org/0000-0001-5032-6947</orcidid><orcidid>https://orcid.org/0000-0003-0389-2414</orcidid></search><sort><creationdate>20230901</creationdate><title>Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques</title><author>Ochi, Ryota ; Togashi, Takuya ; Osawa, Yoshito ; Horikiri, Fumimasa ; Fujikura, Hajime ; Fujikawa, Kazunari ; Furuya, Takashi ; Isono, Ryota ; Akazawa, Masamichi ; Sato, Taketomo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-f4a269fd5cc21368bf6484cf58bc09d33f6d5acb093c6acafbcc43a4974c2af13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Fermi-level-pinning</topic><topic>GaN</topic><topic>HEMT</topic><topic>PEC</topic><topic>surface states</topic><topic>XPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ochi, Ryota</creatorcontrib><creatorcontrib>Togashi, Takuya</creatorcontrib><creatorcontrib>Osawa, Yoshito</creatorcontrib><creatorcontrib>Horikiri, Fumimasa</creatorcontrib><creatorcontrib>Fujikura, Hajime</creatorcontrib><creatorcontrib>Fujikawa, Kazunari</creatorcontrib><creatorcontrib>Furuya, Takashi</creatorcontrib><creatorcontrib>Isono, Ryota</creatorcontrib><creatorcontrib>Akazawa, Masamichi</creatorcontrib><creatorcontrib>Sato, Taketomo</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ochi, Ryota</au><au>Togashi, Takuya</au><au>Osawa, Yoshito</au><au>Horikiri, Fumimasa</au><au>Fujikura, Hajime</au><au>Fujikawa, Kazunari</au><au>Furuya, Takashi</au><au>Isono, Ryota</au><au>Akazawa, Masamichi</au><au>Sato, Taketomo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2023-09-01</date><risdate>2023</risdate><volume>16</volume><issue>9</issue><spage>91002</spage><pages>91002-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>To investigate how the electrical properties of AlGaN/GaN HEMTs are dominated by the near-surface region, transmission line method and X-ray photoelectron spectroscopy (XPS) measurements were conducted on three samples. There was one sample with poor ohmic properties. The XPS results indicate that the surface-Fermi-level,
E
FS
, position of the poor-ohmic sample was deeper than the others. When a 5 nm thick surface layer was removed by contactless photo-electrochemical etching,
E
FS
shifted to the same position as the others and the contact resistance improved. These results indicate that the control of the near-surface region of AlGaN can be a dominant factor changing the
E
FS
position, which greatly affects the ohmic properties.</abstract><pub>IOP Publishing</pub><doi>10.35848/1882-0786/acf644</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-6710-3045</orcidid><orcidid>https://orcid.org/0000-0001-6528-5973</orcidid><orcidid>https://orcid.org/0000-0001-5032-6947</orcidid><orcidid>https://orcid.org/0000-0003-0389-2414</orcidid><oa>free_for_read</oa></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Fermi-level-pinning GaN HEMT PEC surface states XPS |
| title | Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques |
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