Selective area growth of β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy

We demonstrated selective area growth of β -Ga 2 O 3 by HCl-based halide vapor phase epitaxy on SiO 2 -masked (001) and (010) β -Ga 2 O 3 substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) fac...

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Veröffentlicht in:	Applied physics express 2022-07, Vol.15 (7), p.75503
Hauptverfasser:	Oshima, Takayoshi, Oshima, Yuichi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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