Selective area growth of β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
We demonstrated selective area growth of β -Ga 2 O 3 by HCl-based halide vapor phase epitaxy on SiO 2 -masked (001) and (010) β -Ga 2 O 3 substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) fac...
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| Veröffentlicht in: | Applied physics express 2022-07, Vol.15 (7), p.75503 |
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| container_title | Applied physics express |
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| creator | Oshima, Takayoshi Oshima, Yuichi |
| description | We demonstrated selective area growth of
β
-Ga
2
O
3
by HCl-based halide vapor phase epitaxy on SiO
2
-masked (001) and (010)
β
-Ga
2
O
3
substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) facet dominated the grown shapes owing to their smallest surface energy density. High-aspect-ratio structures having (100) sidewall facets were observed for the stripe windows along [010] and [001] directions on the (001) and (010) substrates, respectively. These structures may be applicable to trenches and fins used for
β
-Ga
2
O
3
-based power devices. |
| doi_str_mv | 10.35848/1882-0786/ac75c8 |
| format | Article |
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β
-Ga
2
O
3
by HCl-based halide vapor phase epitaxy on SiO
2
-masked (001) and (010)
β
-Ga
2
O
3
substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) facet dominated the grown shapes owing to their smallest surface energy density. High-aspect-ratio structures having (100) sidewall facets were observed for the stripe windows along [010] and [001] directions on the (001) and (010) substrates, respectively. These structures may be applicable to trenches and fins used for
β
-Ga
2
O
3
-based power devices.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.35848/1882-0786/ac75c8</identifier><language>eng</language><ispartof>Applied physics express, 2022-07, Vol.15 (7), p.75503</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c908-9809ae1c2822ce73c658db56c435564c6c0305c9abd12a66936f2963f6676ca3</citedby><cites>FETCH-LOGICAL-c908-9809ae1c2822ce73c658db56c435564c6c0305c9abd12a66936f2963f6676ca3</cites><orcidid>0000-0001-8550-9735 ; 0000-0001-8293-4891</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Oshima, Takayoshi</creatorcontrib><creatorcontrib>Oshima, Yuichi</creatorcontrib><title>Selective area growth of β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy</title><title>Applied physics express</title><description>We demonstrated selective area growth of
β
-Ga
2
O
3
by HCl-based halide vapor phase epitaxy on SiO
2
-masked (001) and (010)
β
-Ga
2
O
3
substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) facet dominated the grown shapes owing to their smallest surface energy density. High-aspect-ratio structures having (100) sidewall facets were observed for the stripe windows along [010] and [001] directions on the (001) and (010) substrates, respectively. These structures may be applicable to trenches and fins used for
β
-Ga
2
O
3
-based power devices.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNo9kM1Kw0AUhQdRsFYfwN19gdj5ydxMlhK0FQJd1H24uZmYSCRhEqp5LR_EZ9K20tU5nMWB7xPiXskHY13sVso5HcnE4Yo4sewuxOI8XZ574q7FzTi-S4mxUbgQ-c53nqd274GCJ3gL_efUQF_Dz3e0JtCwBQPlDJusi0oafQUNdW3lYU9DH2Bo_jbwQzvR13wrrmrqRn_3n0uxe356zTZRvl2_ZI95xKl0UepkSl6xdlqzTwyjdVVpkWNjLcaMLI20nFJZKU2IqcFap2hqxASZzFKo0yuHfhyDr4shtB8U5kLJ4iijONAWB_LiJMP8AnPWUW0</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>Oshima, Takayoshi</creator><creator>Oshima, Yuichi</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-8550-9735</orcidid><orcidid>https://orcid.org/0000-0001-8293-4891</orcidid></search><sort><creationdate>20220701</creationdate><title>Selective area growth of β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy</title><author>Oshima, Takayoshi ; Oshima, Yuichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c908-9809ae1c2822ce73c658db56c435564c6c0305c9abd12a66936f2963f6676ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Oshima, Takayoshi</creatorcontrib><creatorcontrib>Oshima, Yuichi</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oshima, Takayoshi</au><au>Oshima, Yuichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective area growth of β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy</atitle><jtitle>Applied physics express</jtitle><date>2022-07-01</date><risdate>2022</risdate><volume>15</volume><issue>7</issue><spage>75503</spage><pages>75503-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><abstract>We demonstrated selective area growth of
β
-Ga
2
O
3
by HCl-based halide vapor phase epitaxy on SiO
2
-masked (001) and (010)
β
-Ga
2
O
3
substrates. Perfect growth selectivity was achieved under the presence of HCl etching gas in addition to the growth precursors. In both substrate cases, (100) facet dominated the grown shapes owing to their smallest surface energy density. High-aspect-ratio structures having (100) sidewall facets were observed for the stripe windows along [010] and [001] directions on the (001) and (010) substrates, respectively. These structures may be applicable to trenches and fins used for
β
-Ga
2
O
3
-based power devices.</abstract><doi>10.35848/1882-0786/ac75c8</doi><orcidid>https://orcid.org/0000-0001-8550-9735</orcidid><orcidid>https://orcid.org/0000-0001-8293-4891</orcidid></addata></record> |
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| identifier | ISSN: 1882-0778 |
| ispartof | Applied physics express, 2022-07, Vol.15 (7), p.75503 |
| issn | 1882-0778 1882-0786 |
| language | eng |
| recordid | cdi_crossref_primary_10_35848_1882_0786_ac75c8 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Selective area growth of β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy |
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