Increase in net donor concentration due to introduction of donor-like defects by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN

Si ions were implanted at a dose of 1 × 10 10 cm −2 into a homoepitaxial n-type GaN layer with a net donor concentration ( N D ) of 3–8 × 10 15 cm −3 . The N D in the implanted region increased by 1–3 × 10 15 cm −3 after annealing at a temperature greater than 900 °C compared with that for the as-gr...

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Veröffentlicht in:	Applied physics express 2022-07, Vol.15 (7), p.76504
Hauptverfasser:	Iguchi, Hiroko, Horita, Masahiro, Suda, Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	electrical property gallium nitride implantation n-type dopant point defect
Online-Zugang:	Volltext
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