Room temperature fabrication and post-annealing treatment of amorphous Ga 2 O 3 photodetectors for deep-ultraviolet light detection

This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga 2 O 3 films at room temperature. The Ga 2 O 3 -based PD exhibits a low dark current of 1.41 × 10 −11 A, a responsivity of 1.77 A W −1 and a fast...

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Veröffentlicht in:	Applied physics express 2022-02, Vol.15 (2), p.22007
Hauptverfasser:	Zhang, Tan, Guan, Denggao, Liu, Ningtao, Zhang, Jianguo, Zhang, Jinfu, Guo, Chenyu, Qiu, Mengting, Yuan, Qilong, Zhang, Wenrui, Ye, Jichun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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