Room temperature fabrication and post-annealing treatment of amorphous Ga 2 O 3 photodetectors for deep-ultraviolet light detection
This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga 2 O 3 films at room temperature. The Ga 2 O 3 -based PD exhibits a low dark current of 1.41 × 10 −11 A, a responsivity of 1.77 A W −1 and a fast...
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| Veröffentlicht in: | Applied physics express 2022-02, Vol.15 (2), p.22007 |
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| container_title | Applied physics express |
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| creator | Zhang, Tan Guan, Denggao Liu, Ningtao Zhang, Jianguo Zhang, Jinfu Guo, Chenyu Qiu, Mengting Yuan, Qilong Zhang, Wenrui Ye, Jichun |
| description | This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga
2
O
3
films at room temperature. The Ga
2
O
3
-based PD exhibits a low dark current of 1.41 × 10
−11
A, a responsivity of 1.77 A W
−1
and a fast rise response time of 114 ms. A series of annealing treatments with different atmospheres have been found effective to reduce the oxygen vacancy concentration, exhibiting a trade-off effect between the responsivity and the response time. These results demonstrate a cost-effective room-temperature approach for fabricating amorphous Ga
2
O
3
-based PDs and developing possible post-synthetic methods for tuning the PD performance. |
| doi_str_mv | 10.35848/1882-0786/ac48d9 |
| format | Article |
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2
O
3
films at room temperature. The Ga
2
O
3
-based PD exhibits a low dark current of 1.41 × 10
−11
A, a responsivity of 1.77 A W
−1
and a fast rise response time of 114 ms. A series of annealing treatments with different atmospheres have been found effective to reduce the oxygen vacancy concentration, exhibiting a trade-off effect between the responsivity and the response time. These results demonstrate a cost-effective room-temperature approach for fabricating amorphous Ga
2
O
3
-based PDs and developing possible post-synthetic methods for tuning the PD performance.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.35848/1882-0786/ac48d9</identifier><language>eng</language><ispartof>Applied physics express, 2022-02, Vol.15 (2), p.22007</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c909-f6a949a38937ff1b978649323ed23c002f41e0727c70832f8c680dc82377e6b3</citedby><cites>FETCH-LOGICAL-c909-f6a949a38937ff1b978649323ed23c002f41e0727c70832f8c680dc82377e6b3</cites><orcidid>0000-0002-0223-1924</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Zhang, Tan</creatorcontrib><creatorcontrib>Guan, Denggao</creatorcontrib><creatorcontrib>Liu, Ningtao</creatorcontrib><creatorcontrib>Zhang, Jianguo</creatorcontrib><creatorcontrib>Zhang, Jinfu</creatorcontrib><creatorcontrib>Guo, Chenyu</creatorcontrib><creatorcontrib>Qiu, Mengting</creatorcontrib><creatorcontrib>Yuan, Qilong</creatorcontrib><creatorcontrib>Zhang, Wenrui</creatorcontrib><creatorcontrib>Ye, Jichun</creatorcontrib><title>Room temperature fabrication and post-annealing treatment of amorphous Ga 2 O 3 photodetectors for deep-ultraviolet light detection</title><title>Applied physics express</title><description>This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga
2
O
3
films at room temperature. The Ga
2
O
3
-based PD exhibits a low dark current of 1.41 × 10
−11
A, a responsivity of 1.77 A W
−1
and a fast rise response time of 114 ms. A series of annealing treatments with different atmospheres have been found effective to reduce the oxygen vacancy concentration, exhibiting a trade-off effect between the responsivity and the response time. These results demonstrate a cost-effective room-temperature approach for fabricating amorphous Ga
2
O
3
-based PDs and developing possible post-synthetic methods for tuning the PD performance.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNo9kN1KAzEQhYMoWKsP4N28wNr8rJvkUorWQqGg3i_T7KRd2d0sSSp47YvbWunVzBwOczgfY_eCP6hHU5qZMEYWXJtqhq40jb1gk7N0ed61uWY3KX1yXpVKVBP28xZCD5n6kSLmfSTwuImtw9yGAXBoYAwpFzgMhF07bCFHwtzTkCF4wD7EcRf2CRYIEtag4HDm0FAml0NM4EOEhmgs9l2O-NWGjjJ07XaX4WQ6xNyyK49dorv_OWXvL88f89ditV4s50-rwlluC1-hLS0qY5X2XmzsoVhplVTUSOU4l74UxLXUTnOjpDeuMrxxRiqtqdqoKROnry6GlCL5eoxtj_G7Frz-Y1gfIdVHYPWJofoFRDdnfA</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>Zhang, Tan</creator><creator>Guan, Denggao</creator><creator>Liu, Ningtao</creator><creator>Zhang, Jianguo</creator><creator>Zhang, Jinfu</creator><creator>Guo, Chenyu</creator><creator>Qiu, Mengting</creator><creator>Yuan, Qilong</creator><creator>Zhang, Wenrui</creator><creator>Ye, Jichun</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0223-1924</orcidid></search><sort><creationdate>20220201</creationdate><title>Room temperature fabrication and post-annealing treatment of amorphous Ga 2 O 3 photodetectors for deep-ultraviolet light detection</title><author>Zhang, Tan ; Guan, Denggao ; Liu, Ningtao ; Zhang, Jianguo ; Zhang, Jinfu ; Guo, Chenyu ; Qiu, Mengting ; Yuan, Qilong ; Zhang, Wenrui ; Ye, Jichun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c909-f6a949a38937ff1b978649323ed23c002f41e0727c70832f8c680dc82377e6b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Tan</creatorcontrib><creatorcontrib>Guan, Denggao</creatorcontrib><creatorcontrib>Liu, Ningtao</creatorcontrib><creatorcontrib>Zhang, Jianguo</creatorcontrib><creatorcontrib>Zhang, Jinfu</creatorcontrib><creatorcontrib>Guo, Chenyu</creatorcontrib><creatorcontrib>Qiu, Mengting</creatorcontrib><creatorcontrib>Yuan, Qilong</creatorcontrib><creatorcontrib>Zhang, Wenrui</creatorcontrib><creatorcontrib>Ye, Jichun</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Tan</au><au>Guan, Denggao</au><au>Liu, Ningtao</au><au>Zhang, Jianguo</au><au>Zhang, Jinfu</au><au>Guo, Chenyu</au><au>Qiu, Mengting</au><au>Yuan, Qilong</au><au>Zhang, Wenrui</au><au>Ye, Jichun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room temperature fabrication and post-annealing treatment of amorphous Ga 2 O 3 photodetectors for deep-ultraviolet light detection</atitle><jtitle>Applied physics express</jtitle><date>2022-02-01</date><risdate>2022</risdate><volume>15</volume><issue>2</issue><spage>22007</spage><pages>22007-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><abstract>This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga
2
O
3
films at room temperature. The Ga
2
O
3
-based PD exhibits a low dark current of 1.41 × 10
−11
A, a responsivity of 1.77 A W
−1
and a fast rise response time of 114 ms. A series of annealing treatments with different atmospheres have been found effective to reduce the oxygen vacancy concentration, exhibiting a trade-off effect between the responsivity and the response time. These results demonstrate a cost-effective room-temperature approach for fabricating amorphous Ga
2
O
3
-based PDs and developing possible post-synthetic methods for tuning the PD performance.</abstract><doi>10.35848/1882-0786/ac48d9</doi><orcidid>https://orcid.org/0000-0002-0223-1924</orcidid></addata></record> |
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| ispartof | Applied physics express, 2022-02, Vol.15 (2), p.22007 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Room temperature fabrication and post-annealing treatment of amorphous Ga 2 O 3 photodetectors for deep-ultraviolet light detection |
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