Simulation of channeled implantation of magnesium ions in gallium nitride

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics express 2021-11, Vol.14 (11), p.116502
Hauptverfasser: Nishimura, Tomoaki, Kachi, Tetsu
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 11
container_start_page 116502
container_title Applied physics express
container_volume 14
creator Nishimura, Tomoaki
Kachi, Tetsu
description
doi_str_mv 10.35848/1882-0786/ac2a55
format Article
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_35848_1882_0786_ac2a55</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apexac2a55</sourcerecordid><originalsourceid>FETCH-LOGICAL-c317t-12d64687f67986ea8394d933b2ad184de8ad622273fc4de1403020ab23ee5ee83</originalsourceid><addsrcrecordid>eNp9UE1Lw0AQXUTBWv0B3nL1ELtf2d0cpagtFDyo52WandQtySZkE9B_b2okJxEGZubNe8PMI-SW0XuRGWlWzBieUm3UCgoOWXZGFjN0PtfaXJKrGI-UKimYWpDtq6-HCnrfhKQpk-IDQsAKXeLrtoLQz5MaDgGjH-pkBGLiQ3KAqjr1wfedd3hNLkqoIt785iV5f3p8W2_S3cvzdv2wSwvBdJ8y7pRURpdK50YhGJFLlwux5-CYkQ4NOMU516Isxo5JKiinsOcCMUM0YknYtLfomhg7LG3b-Rq6L8uo_fHCnp61p8ft5MWoSSeNb1p7bIYujBf-y7_7gw8tflomLWNjqIxy27pSfANRc27A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Simulation of channeled implantation of magnesium ions in gallium nitride</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Nishimura, Tomoaki ; Kachi, Tetsu</creator><creatorcontrib>Nishimura, Tomoaki ; Kachi, Tetsu</creatorcontrib><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.35848/1882-0786/ac2a55</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>channeling ; GaN ; implantation</subject><ispartof>Applied physics express, 2021-11, Vol.14 (11), p.116502</ispartof><rights>2021 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c317t-12d64687f67986ea8394d933b2ad184de8ad622273fc4de1403020ab23ee5ee83</citedby><cites>FETCH-LOGICAL-c317t-12d64687f67986ea8394d933b2ad184de8ad622273fc4de1403020ab23ee5ee83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1882-0786/ac2a55/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Nishimura, Tomoaki</creatorcontrib><creatorcontrib>Kachi, Tetsu</creatorcontrib><title>Simulation of channeled implantation of magnesium ions in gallium nitride</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><subject>channeling</subject><subject>GaN</subject><subject>implantation</subject><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9UE1Lw0AQXUTBWv0B3nL1ELtf2d0cpagtFDyo52WandQtySZkE9B_b2okJxEGZubNe8PMI-SW0XuRGWlWzBieUm3UCgoOWXZGFjN0PtfaXJKrGI-UKimYWpDtq6-HCnrfhKQpk-IDQsAKXeLrtoLQz5MaDgGjH-pkBGLiQ3KAqjr1wfedd3hNLkqoIt785iV5f3p8W2_S3cvzdv2wSwvBdJ8y7pRURpdK50YhGJFLlwux5-CYkQ4NOMU516Isxo5JKiinsOcCMUM0YknYtLfomhg7LG3b-Rq6L8uo_fHCnp61p8ft5MWoSSeNb1p7bIYujBf-y7_7gw8tflomLWNjqIxy27pSfANRc27A</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>Nishimura, Tomoaki</creator><creator>Kachi, Tetsu</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20211101</creationdate><title>Simulation of channeled implantation of magnesium ions in gallium nitride</title><author>Nishimura, Tomoaki ; Kachi, Tetsu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c317t-12d64687f67986ea8394d933b2ad184de8ad622273fc4de1403020ab23ee5ee83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>channeling</topic><topic>GaN</topic><topic>implantation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nishimura, Tomoaki</creatorcontrib><creatorcontrib>Kachi, Tetsu</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nishimura, Tomoaki</au><au>Kachi, Tetsu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation of channeled implantation of magnesium ions in gallium nitride</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2021-11-01</date><risdate>2021</risdate><volume>14</volume><issue>11</issue><spage>116502</spage><pages>116502-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><pub>IOP Publishing</pub><doi>10.35848/1882-0786/ac2a55</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1882-0778
ispartof Applied physics express, 2021-11, Vol.14 (11), p.116502
issn 1882-0778
1882-0786
language eng
recordid cdi_crossref_primary_10_35848_1882_0786_ac2a55
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects channeling
GaN
implantation
title Simulation of channeled implantation of magnesium ions in gallium nitride
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T13%3A41%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Simulation%20of%20channeled%20implantation%20of%20magnesium%20ions%20in%20gallium%20nitride&rft.jtitle=Applied%20physics%20express&rft.au=Nishimura,%20Tomoaki&rft.date=2021-11-01&rft.volume=14&rft.issue=11&rft.spage=116502&rft.pages=116502-&rft.issn=1882-0778&rft.eissn=1882-0786&rft.coden=APEPC4&rft_id=info:doi/10.35848/1882-0786/ac2a55&rft_dat=%3Ciop_cross%3Eapexac2a55%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true