Mitigating self-turn-on failures in scaled carrier stored trench IGBT: a focus on poly-Si resistivity

Scaled IGBTs improve electrical performance, but their lower gate threshold voltage (Vge(th)) results in self-turn-on issues during high dVce/dt or di/dt switching conditions. In this study, we examine a carrier stored trench bipolar transistor (CSTBT) with a split-gate design to address the self-tu...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-12, Vol.63 (12)
Hauptverfasser:	Gollapudi, Srikanth, Omura, Ichiro
Format:	Artikel
Sprache:	eng
Schlagworte:	CSTBT, carrier stored trench IGBT displacement current IGBT poly-Si resistivity power semiconductor self-turn-on failure split-gate
Online-Zugang:	Volltext
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