Transport and material properties of doped BiSbX topological insulator films grown by physical vapor deposition

Topological insulator (TI) BiSb is a promising material for spin–orbit torque (SOT) devices because it has a high spin Hall angle, relatively higher electrical conductivity, and can be produced at RT by physical vapor deposition. In this work, we systematically investigate the effects of doping BiSb...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-12, Vol.63 (12), p.123001
Hauptverfasser:	Le, Quang, York, Brian R., Hwang, Cherngye, Liu, Xiaoyong, Gribelyuk, Michael A., Le, Son, Xu, Lei, James, Jason, Ortega, Jose, Maeda, Maki, Fan, Tuo, Takano, Hisashi, Liu, Min, Ruixian, Zhang, Namba, Shota, Nam Hai, Pham
Format:	Artikel
Sprache:	eng
Schlagworte:	BiSb spin-orbit torque topological insulator
Online-Zugang:	Volltext
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