A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer

An undefined bound exciton line (UDX) with a photon energy 0.6 meV lower than the Si-donor bound exciton line was observed by photoluminescence in gallium nitride (GaN) layers annealed at 1100 °C after electron beam (EB) irradiation at an energy of 137–2000 keV. The UDX was not observed in samples n...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-11, Vol.63 (11), p.110904
Hauptverfasser:	Iguchi, Hiroko, Kataoka, Keita, Horita, Masahiro, Narita, Tetsuo, Yamada, Shinji, Tomita, Kazuyoshi, Kachi, Tetsu, Suda, Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	donor bound exciton electron beam gallium nitride photoluminescence point defects
Online-Zugang:	Volltext
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