A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer

A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer

An undefined bound exciton line (UDX) with a photon energy 0.6 meV lower than the Si-donor bound exciton line was observed by photoluminescence in gallium nitride (GaN) layers annealed at 1100 °C after electron beam (EB) irradiation at an energy of 137–2000 keV. The UDX was not observed in samples n...

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Veröffentlicht in:Japanese Journal of Applied Physics 2024-11, Vol.63 (11), p.110904
Hauptverfasser: Iguchi, Hiroko, Kataoka, Keita, Horita, Masahiro, Narita, Tetsuo, Yamada, Shinji, Tomita, Kazuyoshi, Kachi, Tetsu, Suda, Jun
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Sprache:eng
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donor bound exciton
electron beam
gallium nitride
photoluminescence
point defects
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container_end_page
container_issue 11
container_start_page 110904
container_title Japanese Journal of Applied Physics
container_volume 63
creator Iguchi, Hiroko
Kataoka, Keita
Horita, Masahiro
Narita, Tetsuo
Yamada, Shinji
Tomita, Kazuyoshi
Kachi, Tetsu
Suda, Jun
description An undefined bound exciton line (UDX) with a photon energy 0.6 meV lower than the Si-donor bound exciton line was observed by photoluminescence in gallium nitride (GaN) layers annealed at 1100 °C after electron beam (EB) irradiation at an energy of 137–2000 keV. The UDX was not observed in samples not subjected to EB irradiation or annealing but was found in a sample annealed after EB irradiation at an energy of 137 keV, where only nitrogen atoms are displaced in GaN. The origin of the UDX was presumably formed by a thermal reaction of defects containing nitrogen-displacement-related defects.
doi_str_mv 10.35848/1347-4065/ad918a
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subjects donor bound exciton
electron beam
gallium nitride
photoluminescence
point defects
title A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer
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