The ferroelectric and piezoelectric properties of (Hf 1−x Ce x )O 2 films on indium tin oxide/Pt/TiO x /SiO 2 /(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

The ferroelectric and piezoelectric properties of (Hf 1−x Ce x )O 2 films on indium tin oxide/Pt/TiO x /SiO 2 /(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf 1− x Ce x )O 2 films deposited without substrate heating was investigated. (Hf 1− x Ce x )O 2 films with various x values ( x = 0.07–0.27) and thickness (150–880 nm) were deposited via RF magnetron...

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Veröffentlicht in:Japanese Journal of Applied Physics 2024-04, Vol.63 (4), p.4
Hauptverfasser: Chaya, Nachi, Okamoto, Kazuki, Hirai, Koji, Yasuoka, Shinnosuke, Inoue, Yukari, Yamaoka, Wakiko, Funakubo, Hiroshi
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container_issue 4
container_start_page 4
container_title Japanese Journal of Applied Physics
container_volume 63
creator Chaya, Nachi
Okamoto, Kazuki
Hirai, Koji
Yasuoka, Shinnosuke
Inoue, Yukari
Yamaoka, Wakiko
Funakubo, Hiroshi
description The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf 1− x Ce x )O 2 films deposited without substrate heating was investigated. (Hf 1− x Ce x )O 2 films with various x values ( x = 0.07–0.27) and thickness (150–880 nm) were deposited via RF magnetron sputtering on indium tin oxide (ITO)/Pt/TiO x /SiO 2 /(100)Si substrates. The crystalline phases of the films were observed by X-ray diffraction. The measurements of electrical properties revealed ferroelectric phases in the x range of 0.11–0.21. The film with x = 0.16 exhibited the maximum remanent polarization (Pr) of 15 μ C cm −2 , as well as the highest effective piezoelectric coefficient. In addition, the ferroelectric and structural properties remained almost unchanged with increasing film thickness. Therefore, the no-heating deposition of ferroelectric (Hf 1− x Ce x )O 2 films and their phase stability with respect to thickness were demonstrated in this study. This work provides a pathway for the deposition of ferroelectric (Hf 1− x Ce x )O 2 films on flexible, wearable sensors.
doi_str_mv 10.35848/1347-4065/ad3a71
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title The ferroelectric and piezoelectric properties of (Hf 1−x Ce x )O 2 films on indium tin oxide/Pt/TiO x /SiO 2 /(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method
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