Optical characterizations of GaN/MoS 2 van der Waals heterojunctions with different band alignments

The integration of gallium nitride (GaN) with 2D molybdenum disulfide (MoS 2 ) to form GaN/MoS 2 semiconductor heterojunctions will have high potential applications in novel electronics and optoelectronics. In this study, GaN thin films were grown on pulse-laser-deposited MoS 2 layer by plasma-assis...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-03, Vol.63 (3), p.3
Hauptverfasser:	Hong, Ray-Yu, Wu, Po-Hung, Tsai, Ping-Yu, Yu, Ing-Song
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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