Recovery of cycling-induced degradation of interfacial SiO 2 in HfO 2 -FeFET and its impact on retention characteristics

A detailed understanding of cycling induced degradation of interfacial SiO 2 in HfO 2 -FeFET devices is presented. By direct observation of electron trapping to cycling-generated trap sites in various time domains, we found that trap sites disappear over time. This recovery of the degradation has a...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-02, Vol.63 (2), p.2
Hauptverfasser:	Schlykow, Viktoria, Suzuki, Kunifumi, Yoshimura, Yoko, Hamai, Takamasa, Sakuma, Kiwamu, Matsuo, Kazuhiro, Suzuki, Masamichi, Saitoh, Masumi, Ichihara, Reika
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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