The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure
In this study, we fabricated p-type diamond Schottky barrier diodes (SBD) and performed selective B doping for the p-type channel and Ohmic region by double ion implantation. SBD were redesigned in the configuration and shape of Ohmic and Schottky electrodes to improve device characteristics. The fa...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2023-04, Vol.62 (4), p.40902 |
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| container_issue | 4 |
| container_start_page | 40902 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 62 |
| creator | Seki, Yuhei Chandra Saha, Niloy Shigematsu, Seiya Hoshino, Yasushi Nakata, Jyoji Oishi, Toshiyuki Kasu, Makoto |
| description | In this study, we fabricated p-type diamond Schottky barrier diodes (SBD) and performed selective B doping for the p-type channel and Ohmic region by double ion implantation. SBD were redesigned in the configuration and shape of Ohmic and Schottky electrodes to improve device characteristics. The fabricated device exhibited a rectification ratio of approximately 2400 because of decreasing the parasitic resistance to 2.7 × 10
7
Ω and the ideality factor to 2.7. The Schottky barrier height was obtained to be 1.04 eV. It is indicated that the diamond SBD fabricated only by B ion implantation is improved by refinement of the electrode structure. |
| doi_str_mv | 10.35848/1347-4065/acc70d |
| format | Article |
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7
Ω and the ideality factor to 2.7. The Schottky barrier height was obtained to be 1.04 eV. It is indicated that the diamond SBD fabricated only by B ion implantation is improved by refinement of the electrode structure.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/acc70d</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>diamond semiconductor ; Diamonds ; Doping ; electrical measurement ; Electrodes ; Ion implantation ; Schottky diodes</subject><ispartof>Japanese Journal of Applied Physics, 2023-04, Vol.62 (4), p.40902</ispartof><rights>2023 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-97fc6c3ed74fc501f22f0734a86a3641e464db41608e106478cbb85d0b6eebf83</citedby><cites>FETCH-LOGICAL-c410t-97fc6c3ed74fc501f22f0734a86a3641e464db41608e106478cbb85d0b6eebf83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/acc70d/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Seki, Yuhei</creatorcontrib><creatorcontrib>Chandra Saha, Niloy</creatorcontrib><creatorcontrib>Shigematsu, Seiya</creatorcontrib><creatorcontrib>Hoshino, Yasushi</creatorcontrib><creatorcontrib>Nakata, Jyoji</creatorcontrib><creatorcontrib>Oishi, Toshiyuki</creatorcontrib><creatorcontrib>Kasu, Makoto</creatorcontrib><title>The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>In this study, we fabricated p-type diamond Schottky barrier diodes (SBD) and performed selective B doping for the p-type channel and Ohmic region by double ion implantation. SBD were redesigned in the configuration and shape of Ohmic and Schottky electrodes to improve device characteristics. The fabricated device exhibited a rectification ratio of approximately 2400 because of decreasing the parasitic resistance to 2.7 × 10
7
Ω and the ideality factor to 2.7. The Schottky barrier height was obtained to be 1.04 eV. It is indicated that the diamond SBD fabricated only by B ion implantation is improved by refinement of the electrode structure.</description><subject>diamond semiconductor</subject><subject>Diamonds</subject><subject>Doping</subject><subject>electrical measurement</subject><subject>Electrodes</subject><subject>Ion implantation</subject><subject>Schottky diodes</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kLtOAzEQRS0EEuHxAXSWaGgW_FrvbgmIl4REAdSW1x4Th2S92A5SPoJ_xiEIGkRlzfjcuTMXoSNKTnndivaMctFUgsj6TBvTELuFJj-tbTQhhNFKdIztor2UZqWUtaAT9PE0BewXYwzvsIAh4-Dwo5mGnF9XuNcxeojY-mAhYaf76I3OYHEY5uV7hS-wD8NaP9dD1nld2DD64QWXLUJp-zQteCEjOD_8WOTiCnMwOZbJOOW4NHkZ4QDtOD1PcPj97qPn66uny9vq_uHm7vL8vjKCklx1jTPScLCNcKYm1DHmSMOFbqXmUlAQUtheUElaoESKpjV939aW9BKgdy3fR8ebueXutyWkrGZhGYdiqVjTdQ2vCeOFohvKxJBSOUCN0S90XClK1Ffqah2xWkesNqkXTbXR-DD-Dv2PP_mDn830qCRTQhFBOsLUaB3_BHsYlJA</recordid><startdate>20230401</startdate><enddate>20230401</enddate><creator>Seki, Yuhei</creator><creator>Chandra Saha, Niloy</creator><creator>Shigematsu, Seiya</creator><creator>Hoshino, Yasushi</creator><creator>Nakata, Jyoji</creator><creator>Oishi, Toshiyuki</creator><creator>Kasu, Makoto</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20230401</creationdate><title>The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure</title><author>Seki, Yuhei ; Chandra Saha, Niloy ; Shigematsu, Seiya ; Hoshino, Yasushi ; Nakata, Jyoji ; Oishi, Toshiyuki ; Kasu, Makoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-97fc6c3ed74fc501f22f0734a86a3641e464db41608e106478cbb85d0b6eebf83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>diamond semiconductor</topic><topic>Diamonds</topic><topic>Doping</topic><topic>electrical measurement</topic><topic>Electrodes</topic><topic>Ion implantation</topic><topic>Schottky diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seki, Yuhei</creatorcontrib><creatorcontrib>Chandra Saha, Niloy</creatorcontrib><creatorcontrib>Shigematsu, Seiya</creatorcontrib><creatorcontrib>Hoshino, Yasushi</creatorcontrib><creatorcontrib>Nakata, Jyoji</creatorcontrib><creatorcontrib>Oishi, Toshiyuki</creatorcontrib><creatorcontrib>Kasu, Makoto</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seki, Yuhei</au><au>Chandra Saha, Niloy</au><au>Shigematsu, Seiya</au><au>Hoshino, Yasushi</au><au>Nakata, Jyoji</au><au>Oishi, Toshiyuki</au><au>Kasu, Makoto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2023-04-01</date><risdate>2023</risdate><volume>62</volume><issue>4</issue><spage>40902</spage><pages>40902-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>In this study, we fabricated p-type diamond Schottky barrier diodes (SBD) and performed selective B doping for the p-type channel and Ohmic region by double ion implantation. SBD were redesigned in the configuration and shape of Ohmic and Schottky electrodes to improve device characteristics. The fabricated device exhibited a rectification ratio of approximately 2400 because of decreasing the parasitic resistance to 2.7 × 10
7
Ω and the ideality factor to 2.7. The Schottky barrier height was obtained to be 1.04 eV. It is indicated that the diamond SBD fabricated only by B ion implantation is improved by refinement of the electrode structure.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/acc70d</doi><tpages>4</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | diamond semiconductor Diamonds Doping electrical measurement Electrodes Ion implantation Schottky diodes |
| title | The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure |
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