Examination of proper impurity doping and annealing conditions for solution processed Ga 2 O 3 thin films
We investigated a method to improve the resistivity of Ga 2 O 3 thin films using a wet-process and controlling the Sn-doping conditions. Undoped and Sn-doped single layer Ga 2 O 3 thin films were prepared by changing the solution concentration, the annealing time, the rate of temperature rise, and t...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2023-06, Vol.62 (SF), p.SF1018 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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