Investigation of the interface between LiNbO 3 and Si fabricated via room-temperature bonding method using activated Si nano layer

Wafer-level bonding of LiNbO 3 and Si has been difficult to achieve owing to the large mismatch in their thermal expansion coefficients, which prevents the use of bonding methods involving annealing. As a solution, we have developed a room-temperature wafer-bonding method that uses an activated Si n...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2023-06, Vol.62 (SG), p.SG1041
Hauptverfasser:	Murakami, Seigo, Watanabe, Kaname, Takigawa, Ryo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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