Effect of ion implantation on mechanical strength of silicon wafers
We have investigated the effects of the secondary defects caused by ion implantation on wafer strength. The change in wafer strength with the ion dose has been examined after implanting phosphorus or (BF 2 ) + ions into wafers with and without heat treatment. Ion implantation defects have been obser...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2022-04, Vol.61 (4), p.45503 |
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| creator | Takata, Kousuke Fujise, Jun Ko, Bonggyun Ono, Toshiaki Tanaka, Masaki |
| description | We have investigated the effects of the secondary defects caused by ion implantation on wafer strength. The change in wafer strength with the ion dose has been examined after implanting phosphorus or (BF
2
)
+
ions into wafers with and without heat treatment. Ion implantation defects have been observed using transmission electron microscopy after ion implantation with and without subsequent annealing. The three-point bending tests carried out with the ion implanted samples show that the upper yield stress, which represents wafer strength, gradually decreases with the increasing dose in the case of phosphorus ions and rapidly decreases in the case of (BF
2
)
+
ions due to the formation of secondary defects. In addition, the strength of the wafers with a low oxygen concentration is lower than that of the wafers with a high oxygen concentration. However, the rate of decrease in wafer strength with increasing ion dose is not affected by the oxygen concentration; it only depended on the implanted element. |
| doi_str_mv | 10.35848/1347-4065/ac4f4b |
| format | Article |
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2
)
+
ions into wafers with and without heat treatment. Ion implantation defects have been observed using transmission electron microscopy after ion implantation with and without subsequent annealing. The three-point bending tests carried out with the ion implanted samples show that the upper yield stress, which represents wafer strength, gradually decreases with the increasing dose in the case of phosphorus ions and rapidly decreases in the case of (BF
2
)
+
ions due to the formation of secondary defects. In addition, the strength of the wafers with a low oxygen concentration is lower than that of the wafers with a high oxygen concentration. However, the rate of decrease in wafer strength with increasing ion dose is not affected by the oxygen concentration; it only depended on the implanted element.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac4f4b</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Defects ; Dosage ; Heat treatment ; Ion implantation ; ion inplantation ; mechanical strength ; Oxygen ; Phosphorus ; silicon crystal ; Silicon wafers ; Wafers ; Yield stress</subject><ispartof>Japanese Journal of Applied Physics, 2022-04, Vol.61 (4), p.45503</ispartof><rights>2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd</rights><rights>2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c339t-41423d4283a39d15e8d96df5f5e4f2d66b5e27f9fce9c02ca7065640e367dfc13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac4f4b/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Takata, Kousuke</creatorcontrib><creatorcontrib>Fujise, Jun</creatorcontrib><creatorcontrib>Ko, Bonggyun</creatorcontrib><creatorcontrib>Ono, Toshiaki</creatorcontrib><creatorcontrib>Tanaka, Masaki</creatorcontrib><title>Effect of ion implantation on mechanical strength of silicon wafers</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We have investigated the effects of the secondary defects caused by ion implantation on wafer strength. The change in wafer strength with the ion dose has been examined after implanting phosphorus or (BF
2
)
+
ions into wafers with and without heat treatment. Ion implantation defects have been observed using transmission electron microscopy after ion implantation with and without subsequent annealing. The three-point bending tests carried out with the ion implanted samples show that the upper yield stress, which represents wafer strength, gradually decreases with the increasing dose in the case of phosphorus ions and rapidly decreases in the case of (BF
2
)
+
ions due to the formation of secondary defects. In addition, the strength of the wafers with a low oxygen concentration is lower than that of the wafers with a high oxygen concentration. However, the rate of decrease in wafer strength with increasing ion dose is not affected by the oxygen concentration; it only depended on the implanted element.</description><subject>Defects</subject><subject>Dosage</subject><subject>Heat treatment</subject><subject>Ion implantation</subject><subject>ion inplantation</subject><subject>mechanical strength</subject><subject>Oxygen</subject><subject>Phosphorus</subject><subject>silicon crystal</subject><subject>Silicon wafers</subject><subject>Wafers</subject><subject>Yield stress</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNp9kE1LxDAQhoMouK7-AG8FL17q5rvNUcr6AQte9Byy-XBTum1Nsoj_3tSKXkQYGGbmmXeGF4BLBG8Iq2m9QoRWJYWcrZSmjm6PwOKndQwWEGJUUoHxKTiLsc0lZxQtQLN2zupUDK7wQ1_4_dipPqk0FTn2Vu9U77XqipiC7V_TbkKj77zO43flbIjn4MSpLtqL77wEL3fr5-ah3DzdPza3m1ITIlJJEcXEUFwTRYRBzNZGcOOYY5Y6bDjfMosrJ5y2QkOsVZVf5xRawivjNCJLcDXrjmF4O9iYZDscQp9PSpw5UgsOSabQTOkwxBisk2PwexU-JILyyys5GSMnY-TsVd4p5x0_jL-i__HXf_Btq0bJkaQSUsYgkaNx5BPxdHhm</recordid><startdate>20220401</startdate><enddate>20220401</enddate><creator>Takata, Kousuke</creator><creator>Fujise, Jun</creator><creator>Ko, Bonggyun</creator><creator>Ono, Toshiaki</creator><creator>Tanaka, Masaki</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20220401</creationdate><title>Effect of ion implantation on mechanical strength of silicon wafers</title><author>Takata, Kousuke ; Fujise, Jun ; Ko, Bonggyun ; Ono, Toshiaki ; Tanaka, Masaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-41423d4283a39d15e8d96df5f5e4f2d66b5e27f9fce9c02ca7065640e367dfc13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Defects</topic><topic>Dosage</topic><topic>Heat treatment</topic><topic>Ion implantation</topic><topic>ion inplantation</topic><topic>mechanical strength</topic><topic>Oxygen</topic><topic>Phosphorus</topic><topic>silicon crystal</topic><topic>Silicon wafers</topic><topic>Wafers</topic><topic>Yield stress</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takata, Kousuke</creatorcontrib><creatorcontrib>Fujise, Jun</creatorcontrib><creatorcontrib>Ko, Bonggyun</creatorcontrib><creatorcontrib>Ono, Toshiaki</creatorcontrib><creatorcontrib>Tanaka, Masaki</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takata, Kousuke</au><au>Fujise, Jun</au><au>Ko, Bonggyun</au><au>Ono, Toshiaki</au><au>Tanaka, Masaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of ion implantation on mechanical strength of silicon wafers</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2022-04-01</date><risdate>2022</risdate><volume>61</volume><issue>4</issue><spage>45503</spage><pages>45503-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We have investigated the effects of the secondary defects caused by ion implantation on wafer strength. The change in wafer strength with the ion dose has been examined after implanting phosphorus or (BF
2
)
+
ions into wafers with and without heat treatment. Ion implantation defects have been observed using transmission electron microscopy after ion implantation with and without subsequent annealing. The three-point bending tests carried out with the ion implanted samples show that the upper yield stress, which represents wafer strength, gradually decreases with the increasing dose in the case of phosphorus ions and rapidly decreases in the case of (BF
2
)
+
ions due to the formation of secondary defects. In addition, the strength of the wafers with a low oxygen concentration is lower than that of the wafers with a high oxygen concentration. However, the rate of decrease in wafer strength with increasing ion dose is not affected by the oxygen concentration; it only depended on the implanted element.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ac4f4b</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2022-04, Vol.61 (4), p.45503 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Defects Dosage Heat treatment Ion implantation ion inplantation mechanical strength Oxygen Phosphorus silicon crystal Silicon wafers Wafers Yield stress |
| title | Effect of ion implantation on mechanical strength of silicon wafers |
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