Active pixel sensor readout circuit using indium–tin–zinc-oxide thin-film transistors for image sensor applications
In this study, we describe an active pixel sensor (APS) readout circuit using indium–tin–zinc-oxide (ITZO) thin-film transistors (TFTs). The APS readout circuit with a pixel size of 90 μ m was fabricated using ITZO TFTs with a channel length of 2 μ m, and its performance was experimentally evaluat...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2021-06, Vol.60 (6), p.64002 |
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| container_issue | 6 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Imamura, Koki Sakai, Toshikatsu Takagi, Tomomi Mineo, Keitada Watabe, Toshihisa Sato, Hiroto Aihara, Satoshi |
| description | In this study, we describe an active pixel sensor (APS) readout circuit using indium–tin–zinc-oxide (ITZO) thin-film transistors (TFTs). The APS readout circuit with a pixel size of 90
μ
m was fabricated using ITZO TFTs with a channel length of 2
μ
m, and its performance was experimentally evaluated. The ITZO TFTs were found to have good low-frequency noise performance with an extracted Hooge’s parameter (
α
H
) of 3.5 × 10
−3
, and the APS exhibits a high DC voltage gain of ∼0.81 with satisfactory linearity in a wide output voltage range of ∼6.4 V as well as manageable response times of less than 15
μ
s. The obtained results show the potential of our APS circuits to be applied to TFT-based image sensors with enhanced image quality. |
| doi_str_mv | 10.35848/1347-4065/ac00fe |
| format | Article |
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μ
m was fabricated using ITZO TFTs with a channel length of 2
μ
m, and its performance was experimentally evaluated. The ITZO TFTs were found to have good low-frequency noise performance with an extracted Hooge’s parameter (
α
H
) of 3.5 × 10
−3
, and the APS exhibits a high DC voltage gain of ∼0.81 with satisfactory linearity in a wide output voltage range of ∼6.4 V as well as manageable response times of less than 15
μ
s. The obtained results show the potential of our APS circuits to be applied to TFT-based image sensors with enhanced image quality.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac00fe</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>active pixel sensor (APS) ; Active pixel sensors ; amorphous oxide semiconductor (AOS) ; Circuits ; Image enhancement ; Image quality ; image sensor ; Indium ; indium–tin–zinc–oxide (ITZO) ; LF noise ; low-frequency noise ; Performance evaluation ; Pixels ; Semiconductor devices ; Sensors ; Thin film transistors ; thin-film transistor (TFT) ; Titanium nitride ; Transistors ; Voltage gain ; Zinc</subject><ispartof>Japanese Journal of Applied Physics, 2021-06, Vol.60 (6), p.64002</ispartof><rights>2021 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Jun 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-56c0d5b842a2c69448593aac73fea58389c974d6f2784650d40c35b6d18cd00d3</citedby><cites>FETCH-LOGICAL-c344t-56c0d5b842a2c69448593aac73fea58389c974d6f2784650d40c35b6d18cd00d3</cites><orcidid>0000-0002-2282-0355</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac00fe/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Imamura, Koki</creatorcontrib><creatorcontrib>Sakai, Toshikatsu</creatorcontrib><creatorcontrib>Takagi, Tomomi</creatorcontrib><creatorcontrib>Mineo, Keitada</creatorcontrib><creatorcontrib>Watabe, Toshihisa</creatorcontrib><creatorcontrib>Sato, Hiroto</creatorcontrib><creatorcontrib>Aihara, Satoshi</creatorcontrib><title>Active pixel sensor readout circuit using indium–tin–zinc-oxide thin-film transistors for image sensor applications</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>In this study, we describe an active pixel sensor (APS) readout circuit using indium–tin–zinc-oxide (ITZO) thin-film transistors (TFTs). The APS readout circuit with a pixel size of 90
μ
m was fabricated using ITZO TFTs with a channel length of 2
μ
m, and its performance was experimentally evaluated. The ITZO TFTs were found to have good low-frequency noise performance with an extracted Hooge’s parameter (
α
H
) of 3.5 × 10
−3
, and the APS exhibits a high DC voltage gain of ∼0.81 with satisfactory linearity in a wide output voltage range of ∼6.4 V as well as manageable response times of less than 15
μ
s. The obtained results show the potential of our APS circuits to be applied to TFT-based image sensors with enhanced image quality.</description><subject>active pixel sensor (APS)</subject><subject>Active pixel sensors</subject><subject>amorphous oxide semiconductor (AOS)</subject><subject>Circuits</subject><subject>Image enhancement</subject><subject>Image quality</subject><subject>image sensor</subject><subject>Indium</subject><subject>indium–tin–zinc–oxide (ITZO)</subject><subject>LF noise</subject><subject>low-frequency noise</subject><subject>Performance evaluation</subject><subject>Pixels</subject><subject>Semiconductor devices</subject><subject>Sensors</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>Titanium nitride</subject><subject>Transistors</subject><subject>Voltage gain</subject><subject>Zinc</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kblOBDEMhiMEEsvxAHSRaGiGzUyOzZQIcUkr0UAdhSSzeLWbDEmGq-IdeEOehMByNIjGlq3fv63PCO3V5JByyeS4pmxSMSL4WBtCOreGRj-tdTQipKkr1jbNJtpKaV5KwVk9Qg9HJsO9wz08ugVOzqcQcXTahiFjA9EMkPGQwM8weAvD8u3lNYMv8Rm8qcIjWIfzLfiqg8US56h9gpRDTLgrTrDUM_dtq_t-AUZnCD7toI1OL5Lb_crb6Pr05Or4vJpenl0cH00rQxnLFReGWH4jWaMbI1rGJG-p1mZCO6e5pLI17YRZ0TUTyQQnlhFD-Y2wtTSWEEu30f7Kt4_hbnApq3kYoi8rVcNpQcBk3RZVvVKZGFKKrlN9LKfHJ1UT9clXfcBUHzDVim-ZqVYzEPpf0__0B3_o53PdK0GUUESw8hXV246-Aw4PjlE</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Imamura, Koki</creator><creator>Sakai, Toshikatsu</creator><creator>Takagi, Tomomi</creator><creator>Mineo, Keitada</creator><creator>Watabe, Toshihisa</creator><creator>Sato, Hiroto</creator><creator>Aihara, Satoshi</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2282-0355</orcidid></search><sort><creationdate>20210601</creationdate><title>Active pixel sensor readout circuit using indium–tin–zinc-oxide thin-film transistors for image sensor applications</title><author>Imamura, Koki ; Sakai, Toshikatsu ; Takagi, Tomomi ; Mineo, Keitada ; Watabe, Toshihisa ; Sato, Hiroto ; Aihara, Satoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-56c0d5b842a2c69448593aac73fea58389c974d6f2784650d40c35b6d18cd00d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>active pixel sensor (APS)</topic><topic>Active pixel sensors</topic><topic>amorphous oxide semiconductor (AOS)</topic><topic>Circuits</topic><topic>Image enhancement</topic><topic>Image quality</topic><topic>image sensor</topic><topic>Indium</topic><topic>indium–tin–zinc–oxide (ITZO)</topic><topic>LF noise</topic><topic>low-frequency noise</topic><topic>Performance evaluation</topic><topic>Pixels</topic><topic>Semiconductor devices</topic><topic>Sensors</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><topic>Titanium nitride</topic><topic>Transistors</topic><topic>Voltage gain</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Imamura, Koki</creatorcontrib><creatorcontrib>Sakai, Toshikatsu</creatorcontrib><creatorcontrib>Takagi, Tomomi</creatorcontrib><creatorcontrib>Mineo, Keitada</creatorcontrib><creatorcontrib>Watabe, Toshihisa</creatorcontrib><creatorcontrib>Sato, Hiroto</creatorcontrib><creatorcontrib>Aihara, Satoshi</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Imamura, Koki</au><au>Sakai, Toshikatsu</au><au>Takagi, Tomomi</au><au>Mineo, Keitada</au><au>Watabe, Toshihisa</au><au>Sato, Hiroto</au><au>Aihara, Satoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Active pixel sensor readout circuit using indium–tin–zinc-oxide thin-film transistors for image sensor applications</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2021-06-01</date><risdate>2021</risdate><volume>60</volume><issue>6</issue><spage>64002</spage><pages>64002-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>In this study, we describe an active pixel sensor (APS) readout circuit using indium–tin–zinc-oxide (ITZO) thin-film transistors (TFTs). The APS readout circuit with a pixel size of 90
μ
m was fabricated using ITZO TFTs with a channel length of 2
μ
m, and its performance was experimentally evaluated. The ITZO TFTs were found to have good low-frequency noise performance with an extracted Hooge’s parameter (
α
H
) of 3.5 × 10
−3
, and the APS exhibits a high DC voltage gain of ∼0.81 with satisfactory linearity in a wide output voltage range of ∼6.4 V as well as manageable response times of less than 15
μ
s. The obtained results show the potential of our APS circuits to be applied to TFT-based image sensors with enhanced image quality.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ac00fe</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-2282-0355</orcidid></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2021-06, Vol.60 (6), p.64002 |
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| source | Institute of Physics Journals |
| subjects | active pixel sensor (APS) Active pixel sensors amorphous oxide semiconductor (AOS) Circuits Image enhancement Image quality image sensor Indium indium–tin–zinc–oxide (ITZO) LF noise low-frequency noise Performance evaluation Pixels Semiconductor devices Sensors Thin film transistors thin-film transistor (TFT) Titanium nitride Transistors Voltage gain Zinc |
| title | Active pixel sensor readout circuit using indium–tin–zinc-oxide thin-film transistors for image sensor applications |
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