Preparation of 1 μm thick Y-doped HfO 2 ferroelectric films on (111)Pt/TiO x /SiO 2 /(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

Y-doped HfO 2 films with thicknesses of 150−1000 nm were prepared on Pt/TiO x /SiO 2 /Si substrates by the sputtering method and subsequent heat treatment at 800 °C. XRD analysis showed that the films consisted of an almost pure orthorhombic/tetragonal phase. Hysteresis loops originating from the fe...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2021-03, Vol.60 (3), p.31009
Hauptverfasser:	Shimura, Reijiro, Mimura, Takanori, Tateyama, Akinori, Shimizu, Takao, Yamada, Tomoaki, Tanaka, Yoshitomo, Inoue, Yukari, Funakubo, Hiroshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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