Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Inductively coupled plasma-reactive ion etching (ICP-RIE)-induced damage in heavily Mg-doped p-type GaN ([Mg] = 2 × 1019 cm−3) was investigated by low-temperature photoluminescence (PL) and depth-resolved cathodoluminescence (CL) spectroscopy. From PL measurements, we found broad yellow luminescence...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2021-05, Vol.60 (SB), p.SBBD03
Hauptverfasser:	Kumabe, Takeru, Ando, Yuto, Watanabe, Hirotaka, Deki, Manato, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Cathodoluminescence Current voltage characteristics Damage Depth-resolved CL Electron beams Etching Etching damage GaN ICP-RIE Inductively coupled plasma Low temperature Magnesium Nitrogen p-GaN Penetration depth Photoluminescence Reactive ion etching Spectrum analysis
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