Initial states and analog switching behaviors of two major tantalum oxide resistive memories

A systematic study was performed to understand the two major operation modes, valence change memory (VCM) and electrochemical memory (ECM), of tantalum oxide resistive memory, which were categorized by the type of conductive filament. The tantalum oxide insulator layer was predictably fabricated to...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2020-04, Vol.59 (4), p.44004
Hauptverfasser:	Li, Yuanlin, Tsurumaki-Fukuchi, Atsushi, Arita, Masashi, Morie, Takashi, Takahashi, Yasuo
Format:	Artikel
Sprache:	eng
Schlagworte:	analog resistive switching electrochemical memory oxygen-vacancy resistive memory tantalum oxide valence change memory
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