Initial states and analog switching behaviors of two major tantalum oxide resistive memories

Initial states and analog switching behaviors of two major tantalum oxide resistive memories

A systematic study was performed to understand the two major operation modes, valence change memory (VCM) and electrochemical memory (ECM), of tantalum oxide resistive memory, which were categorized by the type of conductive filament. The tantalum oxide insulator layer was predictably fabricated to...

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Veröffentlicht in:Japanese Journal of Applied Physics 2020-04, Vol.59 (4), p.44004
Hauptverfasser: Li, Yuanlin, Tsurumaki-Fukuchi, Atsushi, Arita, Masashi, Morie, Takashi, Takahashi, Yasuo
Format: Artikel
Sprache:eng
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analog resistive switching
electrochemical memory
oxygen-vacancy
resistive memory
tantalum oxide
valence change memory
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container_issue 4
container_start_page 44004
container_title Japanese Journal of Applied Physics
container_volume 59
creator Li, Yuanlin
Tsurumaki-Fukuchi, Atsushi
Arita, Masashi
Morie, Takashi
Takahashi, Yasuo
description A systematic study was performed to understand the two major operation modes, valence change memory (VCM) and electrochemical memory (ECM), of tantalum oxide resistive memory, which were categorized by the type of conductive filament. The tantalum oxide insulator layer was predictably fabricated to modify the pristine oxygen-vacancy concentration in the insulator layer, where tantalum and copper top electrodes were used to achieve VCM and ECM modes. The distinguishable characteristics of the initial state and analog resistive switching operation revealed the prerequisites for switching capabilities and demonstrated the effects of oxygen vacancies in the two switching modes.
doi_str_mv 10.35848/1347-4065/ab8022
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subjects analog resistive switching
electrochemical memory
oxygen-vacancy
resistive memory
tantalum oxide
valence change memory
title Initial states and analog switching behaviors of two major tantalum oxide resistive memories
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