Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C
A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temp...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2020-04, Vol.59 (4), p.42003 |
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| container_issue | 4 |
| container_start_page | 42003 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 59 |
| creator | Yoshitomi, S. Yamanaka, K. Goto, Y. Yokomura, Y. Nishiyama, N. Arai, S. |
| description | A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temperature performance in 1.3
μ
m wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3
μ
m TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W
−1
, based on the spectrum behavior, which is at least four times lower than the previously observed value. |
| doi_str_mv | 10.35848/1347-4065/ab7ef2 |
| format | Article |
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μ
m wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3
μ
m TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W
−1
, based on the spectrum behavior, which is at least four times lower than the previously observed value.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ab7ef2</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2020-04, Vol.59 (4), p.42003</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1992-bbecdac491658045028cffed3f1eb03c3a78714a4f8fe019b6bdad64e27f8d263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yoshitomi, S.</creatorcontrib><creatorcontrib>Yamanaka, K.</creatorcontrib><creatorcontrib>Goto, Y.</creatorcontrib><creatorcontrib>Yokomura, Y.</creatorcontrib><creatorcontrib>Nishiyama, N.</creatorcontrib><creatorcontrib>Arai, S.</creatorcontrib><title>Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C</title><title>Japanese Journal of Applied Physics</title><description>A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temperature performance in 1.3
μ
m wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3
μ
m TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W
−1
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μ
m wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3
μ
m TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W
−1
, based on the spectrum behavior, which is at least four times lower than the previously observed value.</abstract><doi>10.35848/1347-4065/ab7ef2</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2020-04, Vol.59 (4), p.42003 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | Institute of Physics Journals |
| title | Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C |
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