Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra

The internal electric field caused by the strain-induced piezoelectric polarization in InGaN-based single- or multiple-quantum-well light-emitting diodes (LEDs) is measured by using electroreflectance spectroscopy. The piezoelectric fields (FPZ's) in InGaN LEDs from near-ultraviolet to green sp...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2020-03, Vol.59 (3), p.38001
Hauptverfasser:	Islam, Abu Bashar Mohammad Hamidul, Shim, Jong-In, Shin, Dong-Soo
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition effects Electric fields Indium gallium nitrides Organic light emitting diodes Piezoelectricity Point defects Polynomials Quantum wells Sapphire Spectroscopic analysis Spectrum analysis Substrates Ultraviolet spectra
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creator	Islam, Abu Bashar Mohammad Hamidul Shim, Jong-In Shin, Dong-Soo
description	The internal electric field caused by the strain-induced piezoelectric polarization in InGaN-based single- or multiple-quantum-well light-emitting diodes (LEDs) is measured by using electroreflectance spectroscopy. The piezoelectric fields (FPZ's) in InGaN LEDs from near-ultraviolet to green spectra (In-compositions of ∼3% to ∼30%) are measured to understand the effect of In-composition on FPZ. A second-order polynomial as a function of In-composition is proposed from these FPZ values as a guideline for future research. The experimental trend has a good agreement with the theoretical prediction for low (
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J. Appl. Phys</addtitle><description>The internal electric field caused by the strain-induced piezoelectric polarization in InGaN-based single- or multiple-quantum-well light-emitting diodes (LEDs) is measured by using electroreflectance spectroscopy. The piezoelectric fields (FPZ's) in InGaN LEDs from near-ultraviolet to green spectra (In-compositions of ∼3% to ∼30%) are measured to understand the effect of In-composition on FPZ. A second-order polynomial as a function of In-composition is proposed from these FPZ values as a guideline for future research. The experimental trend has a good agreement with the theoretical prediction for low (<15%) In-compositions. However, the trend diverges from the theoretical prediction at high In-compositions due to defect incorporation into the lattice. The observed effects of epitaxial structures and point defects on FPZ are systematically explained.</description><subject>Composition effects</subject><subject>Electric fields</subject><subject>Indium gallium nitrides</subject><subject>Organic light emitting diodes</subject><subject>Piezoelectricity</subject><subject>Point defects</subject><subject>Polynomials</subject><subject>Quantum wells</subject><subject>Sapphire</subject><subject>Spectroscopic analysis</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Ultraviolet spectra</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kc9O3DAQxq2KSmyBB-BmiUsvBjtOvFluCPFPQpRDOVsTe1KyytrGTkDbN-ItcQgql3LyePT7vtF8Q8ih4Meyqsv6RMhyyUquqhNolrJS38jiX2uHLDgvBCtXRbFLfqS0zl9VlWJBXu87_OuxRzPEztC2w97SztEbdwV3rIGElj6N4IZxQ1-w7xP9E_2Lo95Rw0IPDmmCEB67mIuxSUOEARPdIKQxZm2zpbO5j9hOBTiTyfDeSsaH7Slto99QhxDZ2Gf9c-d7HOjg8yhE9wHDPvneQp_w4OPdIw-XF7_Pr9ntr6ub87NbZmRZDkxJaVowAhWvzarhrTCKW66sXAqAqjWWS15hg7bkZupaaxUUxlpc1kZUco8czb4h-qcR06DXfowuj9SFVFNwgstMiZkyeY2Ud9MhdhuIWy24fr-InuLXU_x6vkjW_Jw1nQ-fpus1BF2ttNRc1pwLHWybUfYf9GvrN_eln6U</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Islam, Abu Bashar Mohammad Hamidul</creator><creator>Shim, Jong-In</creator><creator>Shin, Dong-Soo</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-1305-074X</orcidid><orcidid>https://orcid.org/0000-0002-0863-9138</orcidid></search><sort><creationdate>20200301</creationdate><title>Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra</title><author>Islam, Abu Bashar Mohammad Hamidul ; Shim, Jong-In ; Shin, Dong-Soo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-633cfac1e608c9b0f1c60d06d371aa5fcd0305ebed40c6d37ddd6a2cdde78c153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Composition effects</topic><topic>Electric fields</topic><topic>Indium gallium nitrides</topic><topic>Organic light emitting diodes</topic><topic>Piezoelectricity</topic><topic>Point defects</topic><topic>Polynomials</topic><topic>Quantum wells</topic><topic>Sapphire</topic><topic>Spectroscopic analysis</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Ultraviolet spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Islam, Abu Bashar Mohammad Hamidul</creatorcontrib><creatorcontrib>Shim, Jong-In</creatorcontrib><creatorcontrib>Shin, Dong-Soo</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Islam, Abu Bashar Mohammad Hamidul</au><au>Shim, Jong-In</au><au>Shin, Dong-Soo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2020-03-01</date><risdate>2020</risdate><volume>59</volume><issue>3</issue><spage>38001</spage><pages>38001-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The internal electric field caused by the strain-induced piezoelectric polarization in InGaN-based single- or multiple-quantum-well light-emitting diodes (LEDs) is measured by using electroreflectance spectroscopy. The piezoelectric fields (FPZ's) in InGaN LEDs from near-ultraviolet to green spectra (In-compositions of ∼3% to ∼30%) are measured to understand the effect of In-composition on FPZ. A second-order polynomial as a function of In-composition is proposed from these FPZ values as a guideline for future research. The experimental trend has a good agreement with the theoretical prediction for low (<15%) In-compositions. However, the trend diverges from the theoretical prediction at high In-compositions due to defect incorporation into the lattice. The observed effects of epitaxial structures and point defects on FPZ are systematically explained.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ab7356</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0002-1305-074X</orcidid><orcidid>https://orcid.org/0000-0002-0863-9138</orcidid></addata></record>
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subjects	Composition effects Electric fields Indium gallium nitrides Organic light emitting diodes Piezoelectricity Point defects Polynomials Quantum wells Sapphire Spectroscopic analysis Spectrum analysis Substrates Ultraviolet spectra
title	Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra
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