Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers

We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P+ rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to q...

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Veröffentlicht in:	Micromachines (Basel) 2024-12, Vol.16 (1), p.47
Hauptverfasser:	Kim, Sangyeob, Seok, Ogyun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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