Determination of the barrier height of Pt-Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy

By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive Pt-Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58-0.64 eV. The ideality factors were in the range of  2.11...

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Veröffentlicht in:	Revista mexicana de física 2018-11, Vol.64 (6 Nov-Dec), p.655-661
Hauptverfasser:	Rivera L., J. Eduardo, Muñoz A., Narcizo, Gutiérrez-Paredes, Juliana G., Tamayo-Meza, Pedro A., Alvarez Z., Alejandro, Martínez-Pérez, L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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