Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers
The effect of the growth rate (flow density of In atoms) on the composition of InAs Sb (100) solid solutions at molecular beam epitaxy is experimentally studied using the flows of As and Sb molecules. It is established that the increase in the growth rate at constant fraction of As and Sb molecules...
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| Veröffentlicht in: | Optoelectronics, instrumentation, and data processing instrumentation, and data processing, 2020-09, Vol.56 (5), p.498-502 |
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| container_title | Optoelectronics, instrumentation, and data processing |
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| creator | Emel’yanov, E. A. Petrushkov, M. O. Putyato, M. A. Loshkarev, I. D. Vasev, A. V. Semyagin, B. R. Preobrazhenskii, V. V. |
| description | The effect of the growth rate (flow density of In atoms) on the composition of InAs
Sb
(100) solid solutions at molecular beam epitaxy is experimentally studied using the flows of As
and Sb
molecules. It is established that the increase in the growth rate at constant fraction of As
and Sb
molecules in the flow of molecules of group V and unchanged fraction of the flow of indium atoms to the total flow of molecules of the group V elements leads to decrease in the arsenic fraction in the solid solution. It is shown that the growth rate is an independent parameter of the process of molecular beam epitaxy determining the composition of InAs
Sb
solid solutions. The mechanism of generation of the solid solution compound explaining the role of growth rate is proposed. |
| doi_str_mv | 10.3103/S8756699020050040 |
| format | Article |
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Sb
(100) solid solutions at molecular beam epitaxy is experimentally studied using the flows of As
and Sb
molecules. It is established that the increase in the growth rate at constant fraction of As
and Sb
molecules in the flow of molecules of group V and unchanged fraction of the flow of indium atoms to the total flow of molecules of the group V elements leads to decrease in the arsenic fraction in the solid solution. It is shown that the growth rate is an independent parameter of the process of molecular beam epitaxy determining the composition of InAs
Sb
solid solutions. The mechanism of generation of the solid solution compound explaining the role of growth rate is proposed.</description><identifier>ISSN: 8756-6990</identifier><identifier>EISSN: 1934-7944</identifier><identifier>DOI: 10.3103/S8756699020050040</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Lasers ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy</subject><ispartof>Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.498-502</ispartof><rights>Allerton Press, Inc. 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c240t-89326e62e126000a5ebcec09718e45640cbb94ed12ef47a15585808de113d7443</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3103/S8756699020050040$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3103/S8756699020050040$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Emel’yanov, E. A.</creatorcontrib><creatorcontrib>Petrushkov, M. O.</creatorcontrib><creatorcontrib>Putyato, M. A.</creatorcontrib><creatorcontrib>Loshkarev, I. D.</creatorcontrib><creatorcontrib>Vasev, A. V.</creatorcontrib><creatorcontrib>Semyagin, B. R.</creatorcontrib><creatorcontrib>Preobrazhenskii, V. V.</creatorcontrib><title>Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers</title><title>Optoelectronics, instrumentation, and data processing</title><addtitle>Optoelectron.Instrument.Proc</addtitle><description>The effect of the growth rate (flow density of In atoms) on the composition of InAs
Sb
(100) solid solutions at molecular beam epitaxy is experimentally studied using the flows of As
and Sb
molecules. It is established that the increase in the growth rate at constant fraction of As
and Sb
molecules in the flow of molecules of group V and unchanged fraction of the flow of indium atoms to the total flow of molecules of the group V elements leads to decrease in the arsenic fraction in the solid solution. It is shown that the growth rate is an independent parameter of the process of molecular beam epitaxy determining the composition of InAs
Sb
solid solutions. The mechanism of generation of the solid solution compound explaining the role of growth rate is proposed.</description><subject>Lasers</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>8756-6990</issn><issn>1934-7944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kEFOwzAQRS0EEqVwAHa-QGDs2EnMrlSlVCpCorCOHGcCrtK4shNBb99YZYfEZmbx3h-NPiG3DO5SBun9pshllikFHEACCDgjE6ZSkeRKiHMyiTiJ_JJchbAdJTmCCbEvrkUztNrTR9Q7utjbXv8cqGvoqpuFTUU3rrV1nENvXfdAF02Dpo_C0rvv_ou-6R6p6-jc7fYu2GhFerpkdUvX-oA-XJOLRrcBb373lHw8Ld7nz8n6dbmaz9aJ4QL6pFApzzDjyHgGAFpiZdCAylmBQmYCTFUpgTXj2IhcMykLWUBRI2NpnQuRTgk73TXeheCxKffe7rQ_lAzK2FX5p6sxw0-ZMLrdJ_py6wbfjW_-EzoCK5hqvA</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Emel’yanov, E. A.</creator><creator>Petrushkov, M. O.</creator><creator>Putyato, M. A.</creator><creator>Loshkarev, I. D.</creator><creator>Vasev, A. V.</creator><creator>Semyagin, B. R.</creator><creator>Preobrazhenskii, V. V.</creator><general>Pleiades Publishing</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200901</creationdate><title>Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers</title><author>Emel’yanov, E. A. ; Petrushkov, M. O. ; Putyato, M. A. ; Loshkarev, I. D. ; Vasev, A. V. ; Semyagin, B. R. ; Preobrazhenskii, V. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c240t-89326e62e126000a5ebcec09718e45640cbb94ed12ef47a15585808de113d7443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Lasers</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Emel’yanov, E. A.</creatorcontrib><creatorcontrib>Petrushkov, M. O.</creatorcontrib><creatorcontrib>Putyato, M. A.</creatorcontrib><creatorcontrib>Loshkarev, I. D.</creatorcontrib><creatorcontrib>Vasev, A. V.</creatorcontrib><creatorcontrib>Semyagin, B. R.</creatorcontrib><creatorcontrib>Preobrazhenskii, V. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Optoelectronics, instrumentation, and data processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Emel’yanov, E. A.</au><au>Petrushkov, M. O.</au><au>Putyato, M. A.</au><au>Loshkarev, I. D.</au><au>Vasev, A. V.</au><au>Semyagin, B. R.</au><au>Preobrazhenskii, V. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers</atitle><jtitle>Optoelectronics, instrumentation, and data processing</jtitle><stitle>Optoelectron.Instrument.Proc</stitle><date>2020-09-01</date><risdate>2020</risdate><volume>56</volume><issue>5</issue><spage>498</spage><epage>502</epage><pages>498-502</pages><issn>8756-6990</issn><eissn>1934-7944</eissn><abstract>The effect of the growth rate (flow density of In atoms) on the composition of InAs
Sb
(100) solid solutions at molecular beam epitaxy is experimentally studied using the flows of As
and Sb
molecules. It is established that the increase in the growth rate at constant fraction of As
and Sb
molecules in the flow of molecules of group V and unchanged fraction of the flow of indium atoms to the total flow of molecules of the group V elements leads to decrease in the arsenic fraction in the solid solution. It is shown that the growth rate is an independent parameter of the process of molecular beam epitaxy determining the composition of InAs
Sb
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| issn | 8756-6990 1934-7944 |
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| source | SpringerNature Journals |
| subjects | Lasers Optical Devices Optics Photonics Physics Physics and Astronomy |
| title | Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers |
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