Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. I. Estimation of the required accuracy of heterostructure growth

Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. I. Estimation of the required accuracy of heterostructure growth

Based on the solution to the one-electron Schrödinger equation, current-voltage characteristics of the resonant-tunneling diode based on GaAs/AlAs are numerically simulated. It is shown that the layer thickness accuracy during epitaxial growth of the diode active region should be no worse than one m...

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Veröffentlicht in:Bulletin of the Lebedev Physics Institute 2012-10, Vol.39 (10), p.284-288
Hauptverfasser: Kazakov, I. P., Bazalevskii, M. A., Kapaev, V. V., Tsekhosh, V. I.
Format: Artikel
Sprache:eng
Schlagworte:
Physics
Physics and Astronomy
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Zusammenfassung:Based on the solution to the one-electron Schrödinger equation, current-voltage characteristics of the resonant-tunneling diode based on GaAs/AlAs are numerically simulated. It is shown that the layer thickness accuracy during epitaxial growth of the diode active region should be no worse than one monolayer.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335612100028