Semiconductor Crystal Growth by Modified Vertical Gradient Freezing with Electromagnetic Stirring
This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal g...
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| Veröffentlicht in: | Journal of thermophysics and heat transfer 2005-01, Vol.19 (1), p.95-100 |
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| container_title | Journal of thermophysics and heat transfer |
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| creator | Wang, Xianghong Ma, Nancy Bliss, David F Iseler, Gerald W |
| description | This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a small radial electric current in the melt together with an axial magnetic field. The application of EM stirring provides a significant convective dopant transport in the melt so that the crystal solidifies with relatively good radial and axial homogeneity. Dopant distributions in the crystal and in the melt at several different stages during growth are presented. |
| doi_str_mv | 10.2514/1.10279 |
| format | Article |
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Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a small radial electric current in the melt together with an axial magnetic field. The application of EM stirring provides a significant convective dopant transport in the melt so that the crystal solidifies with relatively good radial and axial homogeneity. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.</description><identifier>ISSN: 0887-8722</identifier><identifier>EISSN: 1533-6808</identifier><identifier>DOI: 10.2514/1.10279</identifier><identifier>CODEN: JTHTEO</identifier><language>eng</language><publisher>Reston, VA: American Institute of Aeronautics and Astronautics</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Electromagnetic stirring ; Exact sciences and technology ; Freezing ; Growth from melts; zone melting and refining ; Materials science ; Methods of crystal growth; physics of crystal growth ; Physics ; Semiconductor crystals</subject><ispartof>Journal of thermophysics and heat transfer, 2005-01, Vol.19 (1), p.95-100</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright American Institute of Aeronautics and Astronautics Jan/Mar 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a377t-e40e387e12896757a151557589c7b9c42e0760da70fa47ed4bf825cbe874fcc83</citedby><cites>FETCH-LOGICAL-a377t-e40e387e12896757a151557589c7b9c42e0760da70fa47ed4bf825cbe874fcc83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4014,27914,27915,27916</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16422403$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Xianghong</creatorcontrib><creatorcontrib>Ma, Nancy</creatorcontrib><creatorcontrib>Bliss, David F</creatorcontrib><creatorcontrib>Iseler, Gerald W</creatorcontrib><title>Semiconductor Crystal Growth by Modified Vertical Gradient Freezing with Electromagnetic Stirring</title><title>Journal of thermophysics and heat transfer</title><description>This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. 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Dopant distributions in the crystal and in the melt at several different stages during growth are presented.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Electromagnetic stirring</subject><subject>Exact sciences and technology</subject><subject>Freezing</subject><subject>Growth from melts; zone melting and refining</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Semiconductor crystals</subject><issn>0887-8722</issn><issn>1533-6808</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNpt0F9LHDEUBfBQFLpq6VcYaFX6MDb_Zm7mURa1BcUH276GbObGRmYn2yTDun56U1cQ1Kc8nB_nhkPIZ0ZPeMPkd3bCKIfuA5mxRoi6VVTtkBlVCmoFnH8keyndUcpaBWxGzA0uvQ1jP9kcYjWPm5TNUF3EsM5_q8Wmugq9dx776g_G7O1TZnqPY67OI-KDH2-rtS_2bECbY1ia2xELrG6yj7GkB2TXmSHhp-d3n_w-P_s1_1FfXl_8nJ9e1kYA5BolRaEAGVddCw0Y1rCmgUZ1FhadlRwptLQ3QJ2RgL1cOMUbu0AF0lmrxD452vauYvg3Ycp66ZPFYTAjhilprlqpQMgCv7yCd2GKY_mb5oKxDlTX8aKOt8rGkFJEp1fRL03caEb1_6E1009DF3n43GdS2cdFM1qfXngrOZdUFPd164w35uXm27pv77JtrFe9024ahoz3WTwCSXmWaA</recordid><startdate>200501</startdate><enddate>200501</enddate><creator>Wang, Xianghong</creator><creator>Ma, Nancy</creator><creator>Bliss, David F</creator><creator>Iseler, Gerald W</creator><general>American Institute of Aeronautics and Astronautics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>H8D</scope><scope>KR7</scope><scope>L7M</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>JG9</scope></search><sort><creationdate>200501</creationdate><title>Semiconductor Crystal Growth by Modified Vertical Gradient Freezing with Electromagnetic Stirring</title><author>Wang, Xianghong ; Ma, Nancy ; Bliss, David F ; Iseler, Gerald W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a377t-e40e387e12896757a151557589c7b9c42e0760da70fa47ed4bf825cbe874fcc83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Electromagnetic stirring</topic><topic>Exact sciences and technology</topic><topic>Freezing</topic><topic>Growth from melts; zone melting and refining</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Semiconductor crystals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Xianghong</creatorcontrib><creatorcontrib>Ma, Nancy</creatorcontrib><creatorcontrib>Bliss, David F</creatorcontrib><creatorcontrib>Iseler, Gerald W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Materials Research Database</collection><jtitle>Journal of thermophysics and heat transfer</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Xianghong</au><au>Ma, Nancy</au><au>Bliss, David F</au><au>Iseler, Gerald W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Semiconductor Crystal Growth by Modified Vertical Gradient Freezing with Electromagnetic Stirring</atitle><jtitle>Journal of thermophysics and heat transfer</jtitle><date>2005-01</date><risdate>2005</risdate><volume>19</volume><issue>1</issue><spage>95</spage><epage>100</epage><pages>95-100</pages><issn>0887-8722</issn><eissn>1533-6808</eissn><coden>JTHTEO</coden><abstract>This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. 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| identifier | ISSN: 0887-8722 |
| ispartof | Journal of thermophysics and heat transfer, 2005-01, Vol.19 (1), p.95-100 |
| issn | 0887-8722 1533-6808 |
| language | eng |
| recordid | cdi_crossref_primary_10_2514_1_10279 |
| source | Alma/SFX Local Collection |
| subjects | Cross-disciplinary physics: materials science rheology Crystal growth Electromagnetic stirring Exact sciences and technology Freezing Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics Semiconductor crystals |
| title | Semiconductor Crystal Growth by Modified Vertical Gradient Freezing with Electromagnetic Stirring |
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