Silicon Infiltration into Functional Polymer for Nano-scale Pattern Development

We report on the utility of self-aligned quadruple patterning (SAQP) using dual carbon layers as mandrels and silicon oxide films as spacers to improve pattern comprehensive pattern fidelity, such as line edge roughness (LER)/ line width roughness, local critical dimension uniformity, and pattern pl...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2017/06/26, Vol.30(3), pp.361-365
Hauptverfasser:	Yamada, Kazuki, Yamato, Masatoshi, Oyama, Kenichi, Yaegashi, Hidetami, Seshimo, Takehiro, Ohmori, Katsumi, Tanaka, Daisuke, Koshiyama, Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Dual-carbon Infiltration Self-aligned quadruple patterning
Online-Zugang:	Volltext
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