High Speed Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition (3rd Report): Electrical and Optical Properties of a-Si Films Fabricated at Very High Deposition Rate

Electrical and optical properties of amorphous silicon (a-Si) films fabricated at very high deposition rate using an atmospheric pressure plasma CVD method with rotary electrode were evaluated for applying to the electric devices. As the results, it was found that a-Si films with this method have go...

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Veröffentlicht in:	Journal of the Japan Society for Precision Engineering 2001/05/05, Vol.67(5), pp.829-833
Hauptverfasser:	MORI, Yuzo, YOSHII, Kumayasu, YASUTAKE, Kiyoshi, KAKIUCHI, Hiroaki, KIYAMA, Seiichi, TARUI, Hisaki, DOMOTO, Yoichi
Format:	Artikel
Sprache:	jpn
Schlagworte:	amorphous silicon atmospheric pressure plasma CVD conductivity high speed deposition
Online-Zugang:	Volltext
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