Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the subs...

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Veröffentlicht in:Opto-electronics review 2012, Vol.20 (4), p.375-378
Hauptverfasser: Izhnin, I. I., Izhnin, A. I., Savytskyy, H. V., Fitsych, O. I., Mikhailov, N. N., Varavin, V. S., Dvoretsky, S. A., Sidorov, Yu. G., Mynbaev, K. D.
Format: Artikel
Sprache:eng
Schlagworte:
defects
GaAs substrate
HgCdTe
ion milling
Lasers
Materials Science
molecular beam epitaxy
Nanotechnology
Optical and Electronic Materials
Optical Devices
Optics
Original Papers
Photonics
Physics
Physics and Astronomy
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Beschreibung
Zusammenfassung:The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 10 15 cm −3 , was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.
ISSN:1230-3402
1896-3757
1896-3757
DOI:10.2478/s11772-012-0048-4