Analysis of correlation and regression between particle ionizing radiation parameters and the stability characteristics of irradiated monocrystalline Si film
This paper deals with the analysis of correlation and regression between the parameters of particle ionizing radiation and the stability characteristics of the irradiated monocrystalline silicon film. Based on the presented theoretical model of correlation and linear regression between two random va...
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| Veröffentlicht in: | Nuclear Technology and Radiation Protection 2014, Vol.29 (2), p.123-127 |
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| container_end_page | 127 |
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| container_issue | 2 |
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| container_title | Nuclear Technology and Radiation Protection |
| container_volume | 29 |
| creator | Jaksic, Uros Arsic, Nebojsa Fetahovic, Irfan Stankovic, Koviljka |
| description | This paper deals with the analysis of correlation and regression between the
parameters of particle ionizing radiation and the stability characteristics
of the irradiated monocrystalline silicon film. Based on the presented
theoretical model of correlation and linear regression between two random
variables, numeric and real experiments were performed. In the numeric
experiment, a simulation of the effect of alpha radiation on a thin layer of
monocrystalline silicon was performed by observing a number of vacancies
along the film depth resulting from a single incident alpha particle. In the
real experiment, the irradiation of a thin silicon film by alpha particles
from a radioactive Am-241 alpha emitter was performed. The observed values of
radiation effect on the Si film were specific resistance and the
concentration of free charge carriers. The results showed a fine concordance
between numeric and real experiments. Correlation verification of the
observed values was presented by linear regression functions. |
| doi_str_mv | 10.2298/NTRP1402123J |
| format | Article |
| fullrecord | <record><control><sourceid>doaj_cross</sourceid><recordid>TN_cdi_crossref_primary_10_2298_NTRP1402123J</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_8a73cec5bdf041288e6b8d0bff5e18a8</doaj_id><sourcerecordid>oai_doaj_org_article_8a73cec5bdf041288e6b8d0bff5e18a8</sourcerecordid><originalsourceid>FETCH-LOGICAL-c339t-461fcc042999fe4068e6ee9d27dd1b2946d213706d61b7f30b8cd3b6c967f5cb3</originalsourceid><addsrcrecordid>eNpNkdtKAzEQhhdRsFbvfIA8gKs5bTa5LMVDRVS0Xi85TNqU7UaSBVnfxXd1bUW8msM__zcMUxTnBF9SquTV4_LlmXBMCWX3B8WE8IqWksjqcJeTkinFj4uTnDcY81pUYlJ8zTrdDjlkFD2yMSVodR9ih3TnUIJVgpx_SgP9B0CH3nXqg20Bjc3wGboVStqFvWXU9BZ6SHnn7teAcq9NaEM_ILseVTuKIY-A3bqQ9l5waBu7aNMwjrdt6AC9BuRDuz0tjrxuM5z9xmnxdnO9nN-VD0-3i_nsobSMqb7kgnhrMadKKQ8cCwkCQDlaO0cMVVw4SliNhRPE1J5hI61jRlglal9Zw6bFYs91UW-a9xS2Og1N1KHZNWJaNb93N1LXzIKtjPOYEyrHVUY6bLyvgEgtR9bFnmVTzDmB_-MR3Py8qfn_JvYN3HGLIg</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Analysis of correlation and regression between particle ionizing radiation parameters and the stability characteristics of irradiated monocrystalline Si film</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Free Full-Text Journals in Chemistry</source><creator>Jaksic, Uros ; Arsic, Nebojsa ; Fetahovic, Irfan ; Stankovic, Koviljka</creator><creatorcontrib>Jaksic, Uros ; Arsic, Nebojsa ; Fetahovic, Irfan ; Stankovic, Koviljka</creatorcontrib><description>This paper deals with the analysis of correlation and regression between the
parameters of particle ionizing radiation and the stability characteristics
of the irradiated monocrystalline silicon film. Based on the presented
theoretical model of correlation and linear regression between two random
variables, numeric and real experiments were performed. In the numeric
experiment, a simulation of the effect of alpha radiation on a thin layer of
monocrystalline silicon was performed by observing a number of vacancies
along the film depth resulting from a single incident alpha particle. In the
real experiment, the irradiation of a thin silicon film by alpha particles
from a radioactive Am-241 alpha emitter was performed. The observed values of
radiation effect on the Si film were specific resistance and the
concentration of free charge carriers. The results showed a fine concordance
between numeric and real experiments. Correlation verification of the
observed values was presented by linear regression functions.</description><identifier>ISSN: 1451-3994</identifier><identifier>EISSN: 1452-8185</identifier><identifier>DOI: 10.2298/NTRP1402123J</identifier><language>eng</language><publisher>VINCA Institute of Nuclear Sciences</publisher><subject>alpha particle ; correlation ; free charge carrier ; regression ; Si film ; specific resistance ; vacancy</subject><ispartof>Nuclear Technology and Radiation Protection, 2014, Vol.29 (2), p.123-127</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c339t-461fcc042999fe4068e6ee9d27dd1b2946d213706d61b7f30b8cd3b6c967f5cb3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Jaksic, Uros</creatorcontrib><creatorcontrib>Arsic, Nebojsa</creatorcontrib><creatorcontrib>Fetahovic, Irfan</creatorcontrib><creatorcontrib>Stankovic, Koviljka</creatorcontrib><title>Analysis of correlation and regression between particle ionizing radiation parameters and the stability characteristics of irradiated monocrystalline Si film</title><title>Nuclear Technology and Radiation Protection</title><description>This paper deals with the analysis of correlation and regression between the
parameters of particle ionizing radiation and the stability characteristics
of the irradiated monocrystalline silicon film. Based on the presented
theoretical model of correlation and linear regression between two random
variables, numeric and real experiments were performed. In the numeric
experiment, a simulation of the effect of alpha radiation on a thin layer of
monocrystalline silicon was performed by observing a number of vacancies
along the film depth resulting from a single incident alpha particle. In the
real experiment, the irradiation of a thin silicon film by alpha particles
from a radioactive Am-241 alpha emitter was performed. The observed values of
radiation effect on the Si film were specific resistance and the
concentration of free charge carriers. The results showed a fine concordance
between numeric and real experiments. Correlation verification of the
observed values was presented by linear regression functions.</description><subject>alpha particle</subject><subject>correlation</subject><subject>free charge carrier</subject><subject>regression</subject><subject>Si film</subject><subject>specific resistance</subject><subject>vacancy</subject><issn>1451-3994</issn><issn>1452-8185</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNpNkdtKAzEQhhdRsFbvfIA8gKs5bTa5LMVDRVS0Xi85TNqU7UaSBVnfxXd1bUW8msM__zcMUxTnBF9SquTV4_LlmXBMCWX3B8WE8IqWksjqcJeTkinFj4uTnDcY81pUYlJ8zTrdDjlkFD2yMSVodR9ih3TnUIJVgpx_SgP9B0CH3nXqg20Bjc3wGboVStqFvWXU9BZ6SHnn7teAcq9NaEM_ILseVTuKIY-A3bqQ9l5waBu7aNMwjrdt6AC9BuRDuz0tjrxuM5z9xmnxdnO9nN-VD0-3i_nsobSMqb7kgnhrMadKKQ8cCwkCQDlaO0cMVVw4SliNhRPE1J5hI61jRlglal9Zw6bFYs91UW-a9xS2Og1N1KHZNWJaNb93N1LXzIKtjPOYEyrHVUY6bLyvgEgtR9bFnmVTzDmB_-MR3Py8qfn_JvYN3HGLIg</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Jaksic, Uros</creator><creator>Arsic, Nebojsa</creator><creator>Fetahovic, Irfan</creator><creator>Stankovic, Koviljka</creator><general>VINCA Institute of Nuclear Sciences</general><scope>AAYXX</scope><scope>CITATION</scope><scope>DOA</scope></search><sort><creationdate>2014</creationdate><title>Analysis of correlation and regression between particle ionizing radiation parameters and the stability characteristics of irradiated monocrystalline Si film</title><author>Jaksic, Uros ; Arsic, Nebojsa ; Fetahovic, Irfan ; Stankovic, Koviljka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-461fcc042999fe4068e6ee9d27dd1b2946d213706d61b7f30b8cd3b6c967f5cb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>alpha particle</topic><topic>correlation</topic><topic>free charge carrier</topic><topic>regression</topic><topic>Si film</topic><topic>specific resistance</topic><topic>vacancy</topic><toplevel>online_resources</toplevel><creatorcontrib>Jaksic, Uros</creatorcontrib><creatorcontrib>Arsic, Nebojsa</creatorcontrib><creatorcontrib>Fetahovic, Irfan</creatorcontrib><creatorcontrib>Stankovic, Koviljka</creatorcontrib><collection>CrossRef</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Nuclear Technology and Radiation Protection</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jaksic, Uros</au><au>Arsic, Nebojsa</au><au>Fetahovic, Irfan</au><au>Stankovic, Koviljka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of correlation and regression between particle ionizing radiation parameters and the stability characteristics of irradiated monocrystalline Si film</atitle><jtitle>Nuclear Technology and Radiation Protection</jtitle><date>2014</date><risdate>2014</risdate><volume>29</volume><issue>2</issue><spage>123</spage><epage>127</epage><pages>123-127</pages><issn>1451-3994</issn><eissn>1452-8185</eissn><abstract>This paper deals with the analysis of correlation and regression between the
parameters of particle ionizing radiation and the stability characteristics
of the irradiated monocrystalline silicon film. Based on the presented
theoretical model of correlation and linear regression between two random
variables, numeric and real experiments were performed. In the numeric
experiment, a simulation of the effect of alpha radiation on a thin layer of
monocrystalline silicon was performed by observing a number of vacancies
along the film depth resulting from a single incident alpha particle. In the
real experiment, the irradiation of a thin silicon film by alpha particles
from a radioactive Am-241 alpha emitter was performed. The observed values of
radiation effect on the Si film were specific resistance and the
concentration of free charge carriers. The results showed a fine concordance
between numeric and real experiments. Correlation verification of the
observed values was presented by linear regression functions.</abstract><pub>VINCA Institute of Nuclear Sciences</pub><doi>10.2298/NTRP1402123J</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Nuclear Technology and Radiation Protection, 2014, Vol.29 (2), p.123-127 |
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| language | eng |
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| subjects | alpha particle correlation free charge carrier regression Si film specific resistance vacancy |
| title | Analysis of correlation and regression between particle ionizing radiation parameters and the stability characteristics of irradiated monocrystalline Si film |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T23%3A47%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-doaj_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20correlation%20and%20regression%20between%20particle%20ionizing%20radiation%20parameters%20and%20the%20stability%20characteristics%20of%20irradiated%20monocrystalline%20Si%20film&rft.jtitle=Nuclear%20Technology%20and%20Radiation%20Protection&rft.au=Jaksic,%20Uros&rft.date=2014&rft.volume=29&rft.issue=2&rft.spage=123&rft.epage=127&rft.pages=123-127&rft.issn=1451-3994&rft.eissn=1452-8185&rft_id=info:doi/10.2298/NTRP1402123J&rft_dat=%3Cdoaj_cross%3Eoai_doaj_org_article_8a73cec5bdf041288e6b8d0bff5e18a8%3C/doaj_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_doaj_id=oai_doaj_org_article_8a73cec5bdf041288e6b8d0bff5e18a8&rfr_iscdi=true |