Defect Rescue Method for Microprocessor, Using Bonding Technology with Ar Atom Bombardment

This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI...

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Veröffentlicht in:	QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY 1998/05/05, Vol.16(2), pp.264-271
Hauptverfasser:	SASAKI, Yasuhiko, KOHNO, Akiomi, HORINO, Masaya, USAMI, Mitsuo, TOKUDA, Masahide, TASE, Takashi
Format:	Artikel
Sprache:	jpn
Schlagworte:	Ar atom bombardment defect rescue method thin LSI film
Online-Zugang:	Volltext
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