Chemical Reaction in Preparation of Sr(Zr0.2Ti0.8)O3 Dielectric Thin Film by RF Magnetron Sputtering

Chemical Reaction in Preparation of Sr(Zr0.2Ti0.8)O3 Dielectric Thin Film by RF Magnetron Sputtering

The chemical reaction to form dielectric thin films of Sr(Zr0.2Ti0.8)O3 by an RF magnetron sputtering method using a ceramic target has been investigated. The amount of extracted Sr by water, Zr/Sr atomic ratio and the lattice constant in addition to other electric and optical characteristics of the...

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Veröffentlicht in:Journal of the Ceramic Society of Japan 1988/12/01, Vol.96(1120), pp.1167-1174
Hauptverfasser: MATSUOKA, Tomizo, FUJITA, Yosuke, KUWATA, Jun, ABE, Atsushi
Format: Artikel
Sprache:eng ; jpn
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Chemical reaction
RF magnetron sputtering
Sr(Zr0.2Ti0.8)O3 delectric
Thin film
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container_end_page 1174
container_issue 1120
container_start_page 1167
container_title Journal of the Ceramic Society of Japan
container_volume 96
creator MATSUOKA, Tomizo
FUJITA, Yosuke
KUWATA, Jun
ABE, Atsushi
description The chemical reaction to form dielectric thin films of Sr(Zr0.2Ti0.8)O3 by an RF magnetron sputtering method using a ceramic target has been investigated. The amount of extracted Sr by water, Zr/Sr atomic ratio and the lattice constant in addition to other electric and optical characteristics of the film were measured to examine the progress of the reaction. As the results, the chemical reaction to form the perovskite type dielectric thin films with the composition described above was found to be well promoted in the sputtering conditions; substrate temperatures above 450°C, sputtering gas pressure at ≈6×10-3 Torr, sputtering gas mixing ratio O2/Ar of ≈3/1, target-substrate distance of 50-60mm, and sputtering power density at ≈4W/cm2, obtaining the good electric and optical characteristics.
doi_str_mv 10.2109/jcersj.96.1167
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subjects Chemical reaction
RF magnetron sputtering
Sr(Zr0.2Ti0.8)O3 delectric
Thin film
title Chemical Reaction in Preparation of Sr(Zr0.2Ti0.8)O3 Dielectric Thin Film by RF Magnetron Sputtering
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