Dependence of electrical conductivity of β-Ga2O3 ceramics on oxygen partial pressure and formation of dislocations

The electrical conductivity of porous and high-purity β-Ga2O3 ceramics was measured as a function of oxygen partial pressure, po2, at 700 to 900 °C. In the high po2 range, the conductivity was proportional to about −1/4th power of po2, while in the lower po2 range less than about 10−5 atm its expone...

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Veröffentlicht in:	Journal of the Ceramic Society of Japan 2021/05/01, Vol.129(5), pp.254-260
Hauptverfasser:	OHYA, Yutaka, KANAOKA, Hiroaki, IWATA, Souma, TAKAI-YAMASHITA, Chika, BAN, Takayuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Dislocation Electrical conductivity Gallium oxide Oxide semiconductor Oxygen partial pressure
Online-Zugang:	Volltext
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