Dependence of electrical conductivity of β-Ga2O3 ceramics on oxygen partial pressure and formation of dislocations

The electrical conductivity of porous and high-purity β-Ga2O3 ceramics was measured as a function of oxygen partial pressure, po2, at 700 to 900 °C. In the high po2 range, the conductivity was proportional to about −1/4th power of po2, while in the lower po2 range less than about 10−5 atm its expone...

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Veröffentlicht in:Journal of the Ceramic Society of Japan 2021/05/01, Vol.129(5), pp.254-260
Hauptverfasser: OHYA, Yutaka, KANAOKA, Hiroaki, IWATA, Souma, TAKAI-YAMASHITA, Chika, BAN, Takayuki
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container_end_page 260
container_issue 5
container_start_page 254
container_title Journal of the Ceramic Society of Japan
container_volume 129
creator OHYA, Yutaka
KANAOKA, Hiroaki
IWATA, Souma
TAKAI-YAMASHITA, Chika
BAN, Takayuki
description The electrical conductivity of porous and high-purity β-Ga2O3 ceramics was measured as a function of oxygen partial pressure, po2, at 700 to 900 °C. In the high po2 range, the conductivity was proportional to about −1/4th power of po2, while in the lower po2 range less than about 10−5 atm its exponent was −0.1 to −0.13. This suggests that different types of defects were formed at high and low po2. The point defect of doubly ionized interstitial gallium ion causes the exponent of −1/4, the same value of the experiment in high po2. When po2 was changed, the electrical conductivity first changed sharply, followed by a slow change, suggesting some migrations and/or formation of crystalline defects, and so on. In the Ga2O3 samples, many dislocations, with density of about 1012 cm−2, were observed. As the source of carriers, line defects, such as dislocations, should be considered as well as point defects.
doi_str_mv 10.2109/jcersj2.21019
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fullrecord <record><control><sourceid>jstage_cross</sourceid><recordid>TN_cdi_crossref_primary_10_2109_jcersj2_21019</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>article_jcersj2_129_5_129_21019_article_char_en</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-77cb723078c135e8af30adf2bcea18163ad7fe5fa9b5356a2081f28d07986aea3</originalsourceid><addsrcrecordid>eNo9kEtOw0AMhkcIJEphyX4uEJhHk0yWqJQWqVI3sI5cx1MmSpNoJkX0WhyEM5GkVTd-yJ9t_T9jj1I8KSmy5xLJh1INjcyu2ETqmYmSWMfXfW2MikQ607fsLoRSiETNtJmw8Eot1QXVSLyxnCrCzjuEimNTFwfs3LfrjsPo7zdagtpo3n-BvcPAm5o3P8cd1bwF37l-p_UUwsETh7rgtvF76NxAWV64UDU4tuGe3VioAj2c85R9vi0-5qtovVm-z1_WEaos7qI0xW2qtEgNSh2TAasFFFZtkUAamWgoUkuxhWzba0xACSOtMoVIM5MAgZ6y6HQXfROCJ5u33u3BH3Mp8sGx_OxYPjrW84sTX4YOdnShB3FY0YWWKsvjMY57lzl-gc-p1v8TLnv5</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dependence of electrical conductivity of β-Ga2O3 ceramics on oxygen partial pressure and formation of dislocations</title><source>J-STAGE Free</source><creator>OHYA, Yutaka ; KANAOKA, Hiroaki ; IWATA, Souma ; TAKAI-YAMASHITA, Chika ; BAN, Takayuki</creator><creatorcontrib>OHYA, Yutaka ; KANAOKA, Hiroaki ; IWATA, Souma ; TAKAI-YAMASHITA, Chika ; BAN, Takayuki</creatorcontrib><description>The electrical conductivity of porous and high-purity β-Ga2O3 ceramics was measured as a function of oxygen partial pressure, po2, at 700 to 900 °C. In the high po2 range, the conductivity was proportional to about −1/4th power of po2, while in the lower po2 range less than about 10−5 atm its exponent was −0.1 to −0.13. This suggests that different types of defects were formed at high and low po2. The point defect of doubly ionized interstitial gallium ion causes the exponent of −1/4, the same value of the experiment in high po2. When po2 was changed, the electrical conductivity first changed sharply, followed by a slow change, suggesting some migrations and/or formation of crystalline defects, and so on. In the Ga2O3 samples, many dislocations, with density of about 1012 cm−2, were observed. As the source of carriers, line defects, such as dislocations, should be considered as well as point defects.</description><identifier>ISSN: 1882-0743</identifier><identifier>EISSN: 1348-6535</identifier><identifier>DOI: 10.2109/jcersj2.21019</identifier><language>eng</language><publisher>The Ceramic Society of Japan</publisher><subject>Dislocation ; Electrical conductivity ; Gallium oxide ; Oxide semiconductor ; Oxygen partial pressure</subject><ispartof>Journal of the Ceramic Society of Japan, 2021/05/01, Vol.129(5), pp.254-260</ispartof><rights>2021 The Ceramic Society of Japan</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-77cb723078c135e8af30adf2bcea18163ad7fe5fa9b5356a2081f28d07986aea3</citedby><cites>FETCH-LOGICAL-c295t-77cb723078c135e8af30adf2bcea18163ad7fe5fa9b5356a2081f28d07986aea3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1883,27924,27925</link.rule.ids></links><search><creatorcontrib>OHYA, Yutaka</creatorcontrib><creatorcontrib>KANAOKA, Hiroaki</creatorcontrib><creatorcontrib>IWATA, Souma</creatorcontrib><creatorcontrib>TAKAI-YAMASHITA, Chika</creatorcontrib><creatorcontrib>BAN, Takayuki</creatorcontrib><title>Dependence of electrical conductivity of β-Ga2O3 ceramics on oxygen partial pressure and formation of dislocations</title><title>Journal of the Ceramic Society of Japan</title><addtitle>J. Ceram. Soc. Japan</addtitle><description>The electrical conductivity of porous and high-purity β-Ga2O3 ceramics was measured as a function of oxygen partial pressure, po2, at 700 to 900 °C. In the high po2 range, the conductivity was proportional to about −1/4th power of po2, while in the lower po2 range less than about 10−5 atm its exponent was −0.1 to −0.13. This suggests that different types of defects were formed at high and low po2. The point defect of doubly ionized interstitial gallium ion causes the exponent of −1/4, the same value of the experiment in high po2. When po2 was changed, the electrical conductivity first changed sharply, followed by a slow change, suggesting some migrations and/or formation of crystalline defects, and so on. In the Ga2O3 samples, many dislocations, with density of about 1012 cm−2, were observed. As the source of carriers, line defects, such as dislocations, should be considered as well as point defects.</description><subject>Dislocation</subject><subject>Electrical conductivity</subject><subject>Gallium oxide</subject><subject>Oxide semiconductor</subject><subject>Oxygen partial pressure</subject><issn>1882-0743</issn><issn>1348-6535</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9kEtOw0AMhkcIJEphyX4uEJhHk0yWqJQWqVI3sI5cx1MmSpNoJkX0WhyEM5GkVTd-yJ9t_T9jj1I8KSmy5xLJh1INjcyu2ETqmYmSWMfXfW2MikQ607fsLoRSiETNtJmw8Eot1QXVSLyxnCrCzjuEimNTFwfs3LfrjsPo7zdagtpo3n-BvcPAm5o3P8cd1bwF37l-p_UUwsETh7rgtvF76NxAWV64UDU4tuGe3VioAj2c85R9vi0-5qtovVm-z1_WEaos7qI0xW2qtEgNSh2TAasFFFZtkUAamWgoUkuxhWzba0xACSOtMoVIM5MAgZ6y6HQXfROCJ5u33u3BH3Mp8sGx_OxYPjrW84sTX4YOdnShB3FY0YWWKsvjMY57lzl-gc-p1v8TLnv5</recordid><startdate>20210501</startdate><enddate>20210501</enddate><creator>OHYA, Yutaka</creator><creator>KANAOKA, Hiroaki</creator><creator>IWATA, Souma</creator><creator>TAKAI-YAMASHITA, Chika</creator><creator>BAN, Takayuki</creator><general>The Ceramic Society of Japan</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20210501</creationdate><title>Dependence of electrical conductivity of β-Ga2O3 ceramics on oxygen partial pressure and formation of dislocations</title><author>OHYA, Yutaka ; KANAOKA, Hiroaki ; IWATA, Souma ; TAKAI-YAMASHITA, Chika ; BAN, Takayuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-77cb723078c135e8af30adf2bcea18163ad7fe5fa9b5356a2081f28d07986aea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Dislocation</topic><topic>Electrical conductivity</topic><topic>Gallium oxide</topic><topic>Oxide semiconductor</topic><topic>Oxygen partial pressure</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OHYA, Yutaka</creatorcontrib><creatorcontrib>KANAOKA, Hiroaki</creatorcontrib><creatorcontrib>IWATA, Souma</creatorcontrib><creatorcontrib>TAKAI-YAMASHITA, Chika</creatorcontrib><creatorcontrib>BAN, Takayuki</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Ceramic Society of Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OHYA, Yutaka</au><au>KANAOKA, Hiroaki</au><au>IWATA, Souma</au><au>TAKAI-YAMASHITA, Chika</au><au>BAN, Takayuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of electrical conductivity of β-Ga2O3 ceramics on oxygen partial pressure and formation of dislocations</atitle><jtitle>Journal of the Ceramic Society of Japan</jtitle><addtitle>J. Ceram. Soc. Japan</addtitle><date>2021-05-01</date><risdate>2021</risdate><volume>129</volume><issue>5</issue><spage>254</spage><epage>260</epage><pages>254-260</pages><issn>1882-0743</issn><eissn>1348-6535</eissn><abstract>The electrical conductivity of porous and high-purity β-Ga2O3 ceramics was measured as a function of oxygen partial pressure, po2, at 700 to 900 °C. In the high po2 range, the conductivity was proportional to about −1/4th power of po2, while in the lower po2 range less than about 10−5 atm its exponent was −0.1 to −0.13. This suggests that different types of defects were formed at high and low po2. The point defect of doubly ionized interstitial gallium ion causes the exponent of −1/4, the same value of the experiment in high po2. When po2 was changed, the electrical conductivity first changed sharply, followed by a slow change, suggesting some migrations and/or formation of crystalline defects, and so on. In the Ga2O3 samples, many dislocations, with density of about 1012 cm−2, were observed. As the source of carriers, line defects, such as dislocations, should be considered as well as point defects.</abstract><pub>The Ceramic Society of Japan</pub><doi>10.2109/jcersj2.21019</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record>
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subjects Dislocation
Electrical conductivity
Gallium oxide
Oxide semiconductor
Oxygen partial pressure
title Dependence of electrical conductivity of β-Ga2O3 ceramics on oxygen partial pressure and formation of dislocations
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T23%3A42%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-jstage_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dependence%20of%20electrical%20conductivity%20of%20%CE%B2-Ga2O3%20ceramics%20on%20oxygen%20partial%20pressure%20and%20formation%20of%20dislocations&rft.jtitle=Journal%20of%20the%20Ceramic%20Society%20of%20Japan&rft.au=OHYA,%20Yutaka&rft.date=2021-05-01&rft.volume=129&rft.issue=5&rft.spage=254&rft.epage=260&rft.pages=254-260&rft.issn=1882-0743&rft.eissn=1348-6535&rft_id=info:doi/10.2109/jcersj2.21019&rft_dat=%3Cjstage_cross%3Earticle_jcersj2_129_5_129_21019_article_char_en%3C/jstage_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true