Investigation of Growth kinetics of the Electrochemical Germanium Nanowire Array Deposition in Galvanostatic Regime Using Indium Nanoparticles

Investigation of Growth kinetics of the Electrochemical Germanium Nanowire Array Deposition in Galvanostatic Regime Using Indium Nanoparticles

The features of growth kinetics of the electrochemical Ge nanowires deposition from GeO2 aqueous solutions using indium nanoparticles as crystallization centers are reported. The use of the galvanostatic regime makes it possible to identify sections on the obtained potential-time curves that corresp...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:International journal of electrochemical science 2022-03, Vol.17 (3), p.220317, Article 220317
Hauptverfasser: Gavrilin, Ilya, Martynova, Irina, Zakharov, Andrei, Gavrilov, Sergey
Format: Artikel
Sprache:eng
Schlagworte:
cathodic deposition
galvanostatic regime
Ge nanowires
nanoparticles
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 3
container_start_page 220317
container_title International journal of electrochemical science
container_volume 17
creator Gavrilin, Ilya
Martynova, Irina
Zakharov, Andrei
Gavrilov, Sergey
description The features of growth kinetics of the electrochemical Ge nanowires deposition from GeO2 aqueous solutions using indium nanoparticles as crystallization centers are reported. The use of the galvanostatic regime makes it possible to identify sections on the obtained potential-time curves that corresponds to the beginning and completion of the Ge nanowires growth process. It has been established that the Ge nanowires formation efficiency does not depend on the indium mass deposited on the substrate. However, the increase of current density leads to a decrease of the indium mass which participates in the Ge nanowires formation.
doi_str_mv 10.20964/2022.03.38
format Article
fullrecord <record><control><sourceid>elsevier_cross</sourceid><recordid>TN_cdi_crossref_primary_10_20964_2022_03_38</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S1452398123022599</els_id><sourcerecordid>S1452398123022599</sourcerecordid><originalsourceid>FETCH-LOGICAL-c274t-2f01b4d06c6b60c6303a0f95dbbe2af050d513440e826322d1254802434f1d1f3</originalsourceid><addsrcrecordid>eNptUM1OAjEQbowmEuTkC_RuFvu3y-6RIK4kRBMj56bbzkJ1t0vaCuElfGYX0MSDc5nJfD-Z-RC6pWTMSJGJe0YYGxM-5vkFGlCRsoQXOb38M1-jUQjvpC9RcDGZDNDXwu0gRLtW0XYOdzUufbePG_xhHUSrw3EVN4DnDejoO72B1mrV4BJ8q5z9bPGzct3eesBT79UBP8C2C_bkZh0uVbPr8RB7f41fYW1bwKtg3RovnPmVb5Xv4QbCDbqqVRNg9NOHaPU4f5s9JcuXcjGbLhPNJiImrCa0EoZkOqsyojNOuCJ1kZqqAqZqkhKTUi4EgZxlnDFDWSpywgQXNTW05kN0d_bVvgvBQy233rbKHyQl8pSmPKYpCZc879npmQ39STsLXgZtwWkw_ds6StPZf3XfWdl6zg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of Growth kinetics of the Electrochemical Germanium Nanowire Array Deposition in Galvanostatic Regime Using Indium Nanoparticles</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Gavrilin, Ilya ; Martynova, Irina ; Zakharov, Andrei ; Gavrilov, Sergey</creator><creatorcontrib>Gavrilin, Ilya ; Martynova, Irina ; Zakharov, Andrei ; Gavrilov, Sergey</creatorcontrib><description>The features of growth kinetics of the electrochemical Ge nanowires deposition from GeO2 aqueous solutions using indium nanoparticles as crystallization centers are reported. The use of the galvanostatic regime makes it possible to identify sections on the obtained potential-time curves that corresponds to the beginning and completion of the Ge nanowires growth process. It has been established that the Ge nanowires formation efficiency does not depend on the indium mass deposited on the substrate. However, the increase of current density leads to a decrease of the indium mass which participates in the Ge nanowires formation.</description><identifier>ISSN: 1452-3981</identifier><identifier>EISSN: 1452-3981</identifier><identifier>DOI: 10.20964/2022.03.38</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>cathodic deposition ; galvanostatic regime ; Ge nanowires ; nanoparticles</subject><ispartof>International journal of electrochemical science, 2022-03, Vol.17 (3), p.220317, Article 220317</ispartof><rights>2022 The Authors. Published by ESG</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c274t-2f01b4d06c6b60c6303a0f95dbbe2af050d513440e826322d1254802434f1d1f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Gavrilin, Ilya</creatorcontrib><creatorcontrib>Martynova, Irina</creatorcontrib><creatorcontrib>Zakharov, Andrei</creatorcontrib><creatorcontrib>Gavrilov, Sergey</creatorcontrib><title>Investigation of Growth kinetics of the Electrochemical Germanium Nanowire Array Deposition in Galvanostatic Regime Using Indium Nanoparticles</title><title>International journal of electrochemical science</title><description>The features of growth kinetics of the electrochemical Ge nanowires deposition from GeO2 aqueous solutions using indium nanoparticles as crystallization centers are reported. The use of the galvanostatic regime makes it possible to identify sections on the obtained potential-time curves that corresponds to the beginning and completion of the Ge nanowires growth process. It has been established that the Ge nanowires formation efficiency does not depend on the indium mass deposited on the substrate. However, the increase of current density leads to a decrease of the indium mass which participates in the Ge nanowires formation.</description><subject>cathodic deposition</subject><subject>galvanostatic regime</subject><subject>Ge nanowires</subject><subject>nanoparticles</subject><issn>1452-3981</issn><issn>1452-3981</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNptUM1OAjEQbowmEuTkC_RuFvu3y-6RIK4kRBMj56bbzkJ1t0vaCuElfGYX0MSDc5nJfD-Z-RC6pWTMSJGJe0YYGxM-5vkFGlCRsoQXOb38M1-jUQjvpC9RcDGZDNDXwu0gRLtW0XYOdzUufbePG_xhHUSrw3EVN4DnDejoO72B1mrV4BJ8q5z9bPGzct3eesBT79UBP8C2C_bkZh0uVbPr8RB7f41fYW1bwKtg3RovnPmVb5Xv4QbCDbqqVRNg9NOHaPU4f5s9JcuXcjGbLhPNJiImrCa0EoZkOqsyojNOuCJ1kZqqAqZqkhKTUi4EgZxlnDFDWSpywgQXNTW05kN0d_bVvgvBQy233rbKHyQl8pSmPKYpCZc879npmQ39STsLXgZtwWkw_ds6StPZf3XfWdl6zg</recordid><startdate>20220301</startdate><enddate>20220301</enddate><creator>Gavrilin, Ilya</creator><creator>Martynova, Irina</creator><creator>Zakharov, Andrei</creator><creator>Gavrilov, Sergey</creator><general>Elsevier B.V</general><scope>6I.</scope><scope>AAFTH</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20220301</creationdate><title>Investigation of Growth kinetics of the Electrochemical Germanium Nanowire Array Deposition in Galvanostatic Regime Using Indium Nanoparticles</title><author>Gavrilin, Ilya ; Martynova, Irina ; Zakharov, Andrei ; Gavrilov, Sergey</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c274t-2f01b4d06c6b60c6303a0f95dbbe2af050d513440e826322d1254802434f1d1f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>cathodic deposition</topic><topic>galvanostatic regime</topic><topic>Ge nanowires</topic><topic>nanoparticles</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gavrilin, Ilya</creatorcontrib><creatorcontrib>Martynova, Irina</creatorcontrib><creatorcontrib>Zakharov, Andrei</creatorcontrib><creatorcontrib>Gavrilov, Sergey</creatorcontrib><collection>ScienceDirect Open Access Titles</collection><collection>Elsevier:ScienceDirect:Open Access</collection><collection>CrossRef</collection><jtitle>International journal of electrochemical science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gavrilin, Ilya</au><au>Martynova, Irina</au><au>Zakharov, Andrei</au><au>Gavrilov, Sergey</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Growth kinetics of the Electrochemical Germanium Nanowire Array Deposition in Galvanostatic Regime Using Indium Nanoparticles</atitle><jtitle>International journal of electrochemical science</jtitle><date>2022-03-01</date><risdate>2022</risdate><volume>17</volume><issue>3</issue><spage>220317</spage><pages>220317-</pages><artnum>220317</artnum><issn>1452-3981</issn><eissn>1452-3981</eissn><abstract>The features of growth kinetics of the electrochemical Ge nanowires deposition from GeO2 aqueous solutions using indium nanoparticles as crystallization centers are reported. The use of the galvanostatic regime makes it possible to identify sections on the obtained potential-time curves that corresponds to the beginning and completion of the Ge nanowires growth process. It has been established that the Ge nanowires formation efficiency does not depend on the indium mass deposited on the substrate. However, the increase of current density leads to a decrease of the indium mass which participates in the Ge nanowires formation.</abstract><pub>Elsevier B.V</pub><doi>10.20964/2022.03.38</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1452-3981
ispartof International journal of electrochemical science, 2022-03, Vol.17 (3), p.220317, Article 220317
issn 1452-3981
1452-3981
language eng
recordid cdi_crossref_primary_10_20964_2022_03_38
source Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry
subjects cathodic deposition
galvanostatic regime
Ge nanowires
nanoparticles
title Investigation of Growth kinetics of the Electrochemical Germanium Nanowire Array Deposition in Galvanostatic Regime Using Indium Nanoparticles
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T13%3A11%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20Growth%20kinetics%20of%20the%20Electrochemical%20Germanium%20Nanowire%20Array%20Deposition%20in%20Galvanostatic%20Regime%20Using%20Indium%20Nanoparticles&rft.jtitle=International%20journal%20of%20electrochemical%20science&rft.au=Gavrilin,%20Ilya&rft.date=2022-03-01&rft.volume=17&rft.issue=3&rft.spage=220317&rft.pages=220317-&rft.artnum=220317&rft.issn=1452-3981&rft.eissn=1452-3981&rft_id=info:doi/10.20964/2022.03.38&rft_dat=%3Celsevier_cross%3ES1452398123022599%3C/elsevier_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_els_id=S1452398123022599&rfr_iscdi=true