Effect of Annealing on Microstructure and Capacitance Properties of Sol-gel TiO2 Film on Aluminum

Sol-gel TiO2 film prepared by dip-coating on aluminum was annealed under different temperatures, and subsequently anodized in ammonium adipate solution. The microstructure and capacitance properties of TiO2 film on aluminum was investigated by X-ray diffraction (XRD), Raman spectroscopy (RS), thermo...

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Veröffentlicht in:International journal of electrochemical science 2021-01, Vol.16 (1), p.150963, Article 150963
Hauptverfasser: Kang, Huifeng, Tian, Wenming, Wu, Jialin, Zhang, Yiming, Li, Zhonglei, Pang, Guoxing
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container_issue 1
container_start_page 150963
container_title International journal of electrochemical science
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creator Kang, Huifeng
Tian, Wenming
Wu, Jialin
Zhang, Yiming
Li, Zhonglei
Pang, Guoxing
description Sol-gel TiO2 film prepared by dip-coating on aluminum was annealed under different temperatures, and subsequently anodized in ammonium adipate solution. The microstructure and capacitance properties of TiO2 film on aluminum was investigated by X-ray diffraction (XRD), Raman spectroscopy (RS), thermogravimetric differential scanning calorimetry (TG-DSC), atomic force microscope (AFM), and capacitance temperature (C-T) test, respectively. The results indicated that TiO2 film on aluminum annealed at 400 oC and 500 oC showed nanocrystalline anatase in 1-5nm and 5-12nm particles, respectively, while that annealed at 600 oC showed mixed nanocrystalline phase (anatase and rutile) in 5-15nm particles. The anatase quantity developed remarkably with annealing temperature. The controlling factor of phase transformation of Sol-gel TiO2 film was annealing temperature, and the aluminum foil substrate had little effect. Compared to specimens without TiO2 film, the specific capacitance of TiO2 coated specimens after anodizing at 400 oC, 500 oC and 600 oC was increased by 15%, 35% and 74%, respectively.
doi_str_mv 10.20964/2021.01.21
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The microstructure and capacitance properties of TiO2 film on aluminum was investigated by X-ray diffraction (XRD), Raman spectroscopy (RS), thermogravimetric differential scanning calorimetry (TG-DSC), atomic force microscope (AFM), and capacitance temperature (C-T) test, respectively. The results indicated that TiO2 film on aluminum annealed at 400 oC and 500 oC showed nanocrystalline anatase in 1-5nm and 5-12nm particles, respectively, while that annealed at 600 oC showed mixed nanocrystalline phase (anatase and rutile) in 5-15nm particles. The anatase quantity developed remarkably with annealing temperature. The controlling factor of phase transformation of Sol-gel TiO2 film was annealing temperature, and the aluminum foil substrate had little effect. 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subjects Aluminum electrolytic capacitor
annealing
anodizing
TiO2 film
title Effect of Annealing on Microstructure and Capacitance Properties of Sol-gel TiO2 Film on Aluminum
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