Novel self-aligned top-gate oxide TFT for AMOLED displays

— A novel highly reliable self‐aligned top‐gate oxide‐semiconductor thin‐film transistor (TFT) formed by using the aluminum (Al) reaction method has been developed. This TFT structure has advantages such as small‐sized TFTs, lower mask count, and small parasitic capacitance. The TFT with a 4‐μm chan...

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Veröffentlicht in:	Journal of the Society for Information Display 2012-01, Vol.20 (1), p.47-52
Hauptverfasser:	Morosawa, Narihiro, Ohshima, Yoshihiro, Morooka, Mitsuo, Arai, Toshiaki, Sasaoka, Tatsuya
Format:	Artikel
Sprache:	eng
Schlagworte:	brightness uniformity OLED Oxide semiconductor parasitic capacitance reliability self-aligned TFT top gate
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container_title	Journal of the Society for Information Display
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creator	Morosawa, Narihiro Ohshima, Yoshihiro Morooka, Mitsuo Arai, Toshiaki Sasaoka, Tatsuya
description	— A novel highly reliable self‐aligned top‐gate oxide‐semiconductor thin‐film transistor (TFT) formed by using the aluminum (Al) reaction method has been developed. This TFT structure has advantages such as small‐sized TFTs, lower mask count, and small parasitic capacitance. The TFT with a 4‐μm channel length exhibited a field‐effect mobility of 21.6 cm2/V‐sec, a threshold voltage of −1.2 V, and a subthreshold swing of 0.12 V/decade. Highly reliable TFTs were obtained after 300°C annealing without increasing the sheet resistivity of the source/drain region. A 9.9‐in.‐diagonal qHD AMOLED display was demonstrated with self‐aligned top‐gate oxide‐semiconductor TFTs for a low‐cost and ultra‐high‐definition OLED display. Excellent brightness uniformity could be achieved due to small parasitic capacitance.
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subjects	brightness uniformity OLED Oxide semiconductor parasitic capacitance reliability self-aligned TFT top gate
title	Novel self-aligned top-gate oxide TFT for AMOLED displays
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